AO3415

AO3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The AO3415 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The AO3415 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology ⚫ ESD Protect 2KV VDS -20 V RDS(ON),max 45 mΩ ID -4.3 A SOT 23 Pin Configurations D G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -4.3 A ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -3.5 A IDM Pulsed Drain Current2 -14 A PD@TA=25℃ Total Power Dissipation3 1.25 W PD@TA=70℃ Total Power Dissipation3 0.84 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJA www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-Ambient 1 --- 100 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 95 ℃/W Ver 2.0 1 AO3415 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-3.5A --- 35 45 VGS=-2.5V , ID=-3A --- 47 55 VGS=-1.8V , ID=-2A --- 67 80 -0.45 --- -0.9 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 8.4 11 --- 2.4 VDS=-15V , VGS=-4.5V , ID=-3A uA nC Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.5 Turn-On Delay Time --- 9 20 Rise Time VDD=-10V , VGS=-4.5V , --- 4 10 Turn-Off Delay Time RG=3.3, ID=-3A --- 42 85 --- 5 10 --- 900 --- 155 --- 205 Min. Typ. Max. Unit --- --- -4.3 A Td(on) Tr Td(off) Tf Ciss Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 Conditions VG=VD=0V , Force Current ISM Pulsed Source Current2,4 --- --- -14 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=-3A , di/dt=100A/µs , --- 21.8 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 6.9 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 AO3415 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 AO3415 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 AO3415 P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number AO3415 www.hs-semi.cn Package code SOT-23L Ver 2.0 Packaging 3000/Tape&Reel 5