HSU70P06

HSU70P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU70P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU70P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -60 V RDS(ON),typ 7.5 mΩ ID -70 A TO252 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V -70 A ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 -44 A IDM Pulsed Drain Current2 -280 A EAS Single Pulse Avalanche Energy3 320 mJ IAS Avalanche Current 80 A 135 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 0.95 ℃/W 1 HSU70P06 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.036 --- V/℃ VGS=-10V , ID=-20A --- 7.5 9.2 VGS=-4.5V , ID=-10A --- 9.3 12 -1.0 -1.6 -2.5 V --- 4.28 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 10 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-3A --- 18 --- S Qg Total Gate Charge (-4.5V) --- 140 --- Qgs Gate-Source Charge --- 17 --- Qgd Gate-Drain Charge --- 29 --- Td(on) VDS=-48V , VGS=-10V , ID=-5A --- 70 --- Rise Time VDD=-48V , VGS=-10V , RG=6, --- 206 --- Turn-Off Delay Time ID=-1A --- 400 --- Fall Time --- 198 --- Ciss Input Capacitance --- 8635 --- Coss Output Capacitance --- 494 --- Crss Reverse Transfer Capacitance --- 291 --- Min. Typ. Max. Unit --- --- -70 A --- --- -140 A --- --- -1 V Tr Td(off) Tf Turn-On Delay Time nC VDS=-25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-50V,VGS=-10V,L=0.1mH,Rg=25,IAS=-80A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU70P06 P-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Voltage Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform diode Fig.5 Typical Output Characteristics www.hs-semi.cn Fig.6 Turn-on Resistances vs.ID Ver 2.0 3 HSU70P06 P-Ch 60V Fast Switching MOSFETs Fig.7 Normalized Transient Impedance Fig.8 Maximum Safe Operation Area Fig.9 Capacitance Characteristics Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSU70P06 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSU70P06 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5