WD3136E-6/TR

WD3136E WD3136E Http//: www.sh-willsemi.com 24V DC/DC Step-Up Regulator Descriptions The WD3136E is a high efficiency, high power, peak current mode step-up converter integrated 32V power MOSFET with 3A (Typ.) current limit. It could support up to maximum 24V output. The boost converter WD3136E runs in Pulse-Width SOT-23-6L Modulation (PWM) mode at 1MHz fixed switching frequency to reduce output ripple and improve external components. At light load, the converter enters LX 1 GND 2 FB 3 WD3136E conversion efficiency. It allows for the use of small Skipping Mode to maintain a high efficiency over a wide load current range. The build-in soft start circuitry minimizes the inrush current at start-up. The WD3136E is available in SOT-23-6L package. 6 NC 5 IN 4 EN Standard product is Pb-free and Halogen-free. Pin Configuration (Top View) Features  Input Voltage Range : 2.4V~20V  Reference Voltage : 600mV  Switching Frequency : 1MHz (Typ.)  Efficiency : Up to 94%  Internal Compensation  Current Limit : 3A (D=50%)  Low RDS(ON) : 100mΩ  Automatic Pulse Skipping Modulation  Package 6 1  PDA, PMP, MP3  Digital Camera 2 3 3136 = Device code DE= Special code Applications Cell Phone and Smart Phone 4 3136 DEYW : SOT-23-6L  5 Y = Year code W = Week code Marking Order Information Will Semiconductor Ltd. 1 Device Package Shipping WD3136E-6/TR SOT-23-6L 3000/Reel & Tape 2020/06 - Rev. 1.0 WD3136E Typical Applications L D VIN VOUT=0.6*(1+R1/R2) 4.7μH~10μH 1 5 IN R1 LX WD3136E FB CIN 10μF 4 ON OFF EN GND 3 COUT 10μF R2 1kΩ~10kΩ 2 Pin Descriptions Symbol Pin No. Descriptions LX 1 Switch Node GND 2 Ground FB 3 Feedback EN 4 Enable IN 5 Power Supply NC 6 No Connection Block Diagram OVP VIN UVLO Thermal Shutdown Current Sense PWM COMP Regulator ISENSE NC Reference & Bias Enable Control Will Semiconductor Ltd. PWM Logic Driver OSC 1MHz FB Low-Pass Filter VREF EN Limiting LX gm Error Amplifier VREF Soft Start GND 2 2020/06 - Rev. 1.0 WD3136E Absolute Maximum Ratings Parameter Symbol Value Unit VIN Pin Voltage Range VIN -0.3~28 V EN Pin Voltage Range VEN -0.3~28 V LX Pin Voltage Range (DC) VLX -0.3~32 V FB Pin Voltage Range VFB -0.3~6 Junction To Ambient Thermal Resistance – SOT-23-6L (Note 1) Operating Junction Temperature Lead Temperature(Soldering, 10s) RθJA 90 TJ -40~150 o 260 o -55~150 o TL Storage Temperature V o Tstg C/W C C C These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Note 1: Thermal Resistance (θJA) is measured with the component mounted on 1.5inch x 1.5inch, 2layers, FR4 test board with 1.0inch x 1.0inch copper area of 2oz in top layer, and in still air condition.   ESD Ratings Parameter Symbol Value Unit HBM 4000 V CDM 2000 V Symbol Value Unit VIN 2.4~20 V VOUT VIN~24 V L 4.7~10 μH CIN 10 (Typ.) μF COUT 10 (Typ.) μF Resistance Between FB Pin And GND R2 1~10 kΩ Operating Ambient Temperature TA -40~85 o Operating Junction Temperature TJ -40~125 o Electrostatic Discharge Recommended Operating Conditions Parameter Input Voltage Range Output Voltage Range Inductor Input Capacitor Output Capacitor C C These values are recommended values that have been successfully tested in several applications. Other values may be acceptable in other applications but should be fully tested by the user. Will Semiconductor Ltd. 3 2020/06 - Rev. 1.0 WD3136E Electronics Characteristics (Ta=25 oC, VIN=3V, L=4.7μH, CIN=COUT=10μF, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units 20 V 2.39 V Basic Operation Operation Voltage Range VIN Under Voltage Lockout VUVLO UVLO Hysteresis VHYS Quiescent Current IQ 2.4 VIN Rising 2.2 No Switching VFB=0.7V 0.1 V 0.25 mA mA Supply Current IS Switching at no load 0.5 Shutdown Current ISD VEN