AGM306D

AGM306D ● General Description Product Summary The AGM306D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance BVDSS RDSON ID 30V 5.7mΩ 60A TO-252 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM306D AGM306D TO-252 ----- ----- 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 30 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 60 A Drain Current-Continuous(Tc=100℃) 39 A Drain Current-Continuous@ Current-Pulsed (Note 2) 200 A Maximum Power Dissipation(Tc=25℃) 51 w Maximum Power Dissipation(Tc=100℃) 12 w Avalanche energy (Note 3) 35 mJ -55 To 150 ℃ Typ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 35 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.5 ℃/W www.agm-mos.com 1 VER2.5 AGM306D Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1.0 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.1 V gFS Forward Transconductance VDS=5V,ID=20A -- 21 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 5.7 7.5 mΩ VGS=4.5V, ID=15A -- 9.5 14 mΩ -- 1050 -- pF -- 165 -- pF -- 147 -- pF -- 6.0 -- 9 -- nS -- 27 -- nS -- 36 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz -- Ω Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- -- -- nS Qg Total Gate Charge -- 34 -- nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 12 -- nC -- -- 60 A VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω VGS=10V, VDS=25V, ID=12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.agm-mos.com 2 VER2.5 AGM306D AGM306D Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： www.agm-mos.com 3 VER2.5 AGM306D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Id (A) Figure 2. Transfer Characteristics Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) www.agm-mos.com TJ-Junction Temperature(℃) 4 VER2.5 AGM306D Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) Figure 11. Normalized Maximum Transient Thermal Impedance www.agm-mos.com 5 VER2.5 AGM306D ● Dimensions SYMBOL min max SYMBOL min max A 2.10 2.50 B 0.85 1.25 b 0.50 0.80 b1 0.50 0.90 b2 0.45 0.70 C 0.45 0.70 D 6.30 6.75 D1 5.10 5.50 E 5.30 6.30 e1 2.25 2.35 L1 9.20 10.60 e2 4.45 4.75 L2 0.90 1.75 L3 0.60 1.10 K 0.00 0.23 www.agm-mos.com 6 VER2.5 AGM306D Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.5