AGM311MAP

AGM311MAP ● General Description Product Summary The AGM311MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance BVDSS 30V high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance ■ POL 10.5mΩ 25A D2 D2 D1 D1 2nd Synchronous Rectifier application ■ BLDC ID PDFN3.3*3.3 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS RDSON S1 G1 S2 G2 Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM311MAP AGM311MAP DFN3.3*3.3 ---- ---- 5000 Table 1. Absolute Maximum Ratings (Tc=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 30 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 25 A Drain Current-Continuous(Tc=100℃) 20 A Drain Current-Continuous@ Current-Pulsed (Note 2) 40 A Maximum Power Dissipation(Tc=25℃) 12.5 w Maximum Power Dissipation(Tc=100℃) 5.0 w Avalanche energy (Note 3) 75 mJ -55 To 150 ℃ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Typ Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 10 ℃/W www.agm-mos.com 1 VER2.5 AGM311MAP Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=10V,ID=5A -- 10 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 10.5 15 mΩ VGS=4.5V, ID=15A -- 15 22 mΩ -- 850 -- pF -- 130 -- pF -- 98 -- pF -- 1.9 -- Ω -- 4.7 -- nS -- 11 -- nS -- 17 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 5.6 -- nS Qg Total Gate Charge -- 10 -- nC Qgs Gate-Source Charge -- 4.0 -- nC Qgd Gate-Drain Charge -- 6.1 -- nC -- -- 25 A VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,Is=20A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM311MAP Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=10V VGS=4.5V 25 0.2 0 0 0 0 50 100 150 Temperature (。C) 0.5 1 1.5 Drain-Source voltage (V) 200 Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 2.5 20 ON Resistance Vgs(th ) 2 1.5 1 10 0.5 0 -50 50 Junction Temperature 0 150 0 Fig.5 On-Resistance VS Gate Source Voltage 30 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance 14 12 RDson(mΩ) 10 20 Drain Current(A) 10 8 6 4 2 0 1 0.5 3 www.agm-mos.com 5 7 VGS( V ) 9 -50 3 0 50 100 Temperature 150 VER2.5 AGM311MAP Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.5 AGM311MAP PDFN3333 Package OutlineData DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 5 VER2.5 AGM311MAP Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces and Replace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5