AGM312M2

AGM312M2 ● General Description The AGM312M2 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features Product Summary BVDSS RDSON ID 30V 18mΩ 9A -30V 40mΩ -6.8A SOP-8 Pin Configuration ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance D1 G1 ● Application D2 G2 ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver S1 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM312M2 AGM312M2 SOP8 --mm --mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage (VGS=0V） 30 -30 V VGS Gate-Source Voltage (VDS=0V) ±20 ±20 V 9 -6.8 A 7.65 -5.78 A Drain Current-Continuous@ Current-Pulsed (Note 2) 40 -40 A Total Power Dissipation(Tc=25℃) 3.1 3.2 W Total Power Dissipation(Tc=70℃) 0.7 0.7 W 1.28 1.28 mJ Drain Current-Continuous(Tc=25℃) (Note 1) ID IDM (pluse) PD EAS TJ,TSTG Drain Current-Continuous(Tc=70℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range -55 To 150 -55 To 150 Typ Max Unit ℃ Table 2. Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- -- ℃/W www.agm-mos.com 1 VER2.5 AGM312M2 Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 -- 2.0 V gFS Forward Transconductance VDS=15V,ID=6.8A -- 27 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=6.8A -- 18 -- mΩ VGS=4.5V, ID=6.6A -- 24 21 mΩ -- 510 -- pF -- 95 -- pF -- 33 -- pF 0.3 1.1 2.3 Ω -- 4 8 nS -- 10 17 nS -- 16 22 nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=20V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 5 9 nS Qg Total Gate Charge -- 5.8 7 nC Qgs Gate-Source Charge -- 1.6 -- nC Qgd Gate-Drain Charge -- 1.4 -- nC -- -- 2.6 A VGS=10V,VDS=20V, ID=5.4A,RGEN=1Ω, RL=3.7Ω VGS=4.5V, VDS=20V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=5.4A -- 0.81 1.2 V trr Reverse Recovery Time IF=5A , dI/dt=100A/µs , -- 12 25 ns Qrr Reverse Recovery Charge TJ=25℃ -- 10 17 nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM312M2 Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.0 -- -2.0 V gFS Forward Transconductance VDS=-15V,ID=-6.7A -- -25 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-8A -- 40 -- mΩ VGS=-4.5V, ID=-5A -- 50 -- mΩ -- 620 -- pF -- 115 -- pF -- 57 -- pF 1.2 5.7 9.6 Ω -- 10 -- nS -- 9 -- nS -- 23 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=-20V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 10 -- nS Qg Total Gate Charge -- 16 22 nC Qgs Gate-Source Charge -- 4.3 -- nC Qgd Gate-Drain Charge -- 7 -- nC -- -- -2.6 A -0.77 -1.2 V VGS=-10V,VDS=-20V, ID=-10A,RGEN=1Ω RL=2Ω VGS=-4.5V, VDS=-20V, ID=-10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-2A -- trr Reverse Recovery Time IF=-5A , dI/dt=100A/µs , -- 31 57 ns Qrr Reverse Recovery Charge TJ=25℃ -- 29 47 nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 3 VER2.5 AGM312M2 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 30 VGS = 3 V 20 6 TC = 25 °C 4 10 2 TC = 125 °C 0 TC = - 55 °C 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0.6 1.8 2.4 1.2 VGS - Gate-to-Source Voltage (V) 0 3 Transfer Characteristics Output Characteristics 1000 0.030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 800 0.025 VGS = 4.5 V 0.020 VGS = 8 V 600 Ciss 400 VGS = 10 V 0.015 200 Crss Coss 0 0.010 0 10 20 30 0 40 10 20 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.8 ID = 6.8 A 8 RDS(on) - On-Resistance (Normalized) ID = 6.8 A VGS - Gate-to-Source Voltage (V) 40 VDS = 32 V 6 VDS = 20 V VDS = 10 V 4 2 3 6 9 12 VGS = 10 V; 4.5 V 1.4 1.2 1.0 0.8 0.6 - 50 0 0 1.6 15 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.agm-mos.com 4 150 VER2.5 AGM312M2 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 6.8 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.04 TJ = 125 °C 0.03 TJ = 25 °C 0.02 0.01 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 60 1.9 48 Power (W) VGS(th) (V) 1.6 ID = 250 μA 1.3 36 24 1 12 0.7 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.agm-mos.com 5 VER2.5 AGM312M2 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.25 1.0 Power (W) Power (W) 3 2 0.75 0.50 1 0.25 0 0.0 0 25 50 75 100 125 150 0 TC - Case Temperature (°C) 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot www.agm-mos.com 25 Power Derating, Junction-to-Ambient 6 VER2.5 AGM312M2 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.agm-mos.com 7 VER2.5 AGM312M2 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 V GS = 3 V 6 4 T C = 25 °C 8 2 T C = 125 °C 0 0.0 T C = - 55 °C V GS = 2 V 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 0 2.5 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 1000 0.090 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 800 0.070 VGS = 4.5 V 0.050 VGS = 8 V VGS = 10 V 0.030 600 Ciss 400 200 Coss Crss 0 0.010 0 10 20 ID - Drain Current (A) 30 40 24 32 8 16 VDS - Drain-to-Source Voltage (V) 0 On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 8 A RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 40 8 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 2 9 18 27 36 45 Qg - Total Gate Charge (nC) Gate Charge www.agm-mos.com V GS = 10 V 1.4 V GS = 4.5 V 1.2 1.0 0.8 0.6 - 50 0 0 1.6 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 8 VER2.5 AGM312M2 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 100 ID = 8 A 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 0.1 T J = 25 °C 0.09 0.06 T J = 125 °C 0.03 0.01 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 1 3 2 4 5 6 7 8 10 9 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 40 ID = 250 μA Power (W) VGS(th) Variance (V) 0.5 ID = 5 mA 0.2 30 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.01 1 10 100 Limited by RDS(on) * ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient www.agm-mos.com 9 VER2.5 AGM312M2 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 100 50 75 TC - Case Temperature (°C) 125 150 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 75 100 50 TC - Case Temperature (°C) 125 150 0 Power Derating, Junction-to-Foot 25 75 100 125 50 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.agm-mos.com 10 VER2.5 AGM312M2 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.agm-mos.com 11 VER2.5 AGM312M2 ●Dimensions(SOP8) SYMBOL min TYP max SYMBOL min max A 4.80 5.00 C 1.30 1.50 A1 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D B2 www.agm-mos.com 5.00 D1 12 0.20 0.23 1.05 0.40 0.62 VER2.5 AGM312M2 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 13 VER2.5