AGM1405C1

AG GM1405C1 C ● General Description Product Summary The AGM1405C1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID 40V 3mΩ 130A protection applications. ● Features ■ Advance TO-220 Pin Configuration high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM1405C1 AGM1405C1 TO-220 Table 1. Reel Size Tape width Quantity ---- 1000 ---- Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 40 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 130 A Drain Current-Continuous(Tc=100℃) 82 A Drain Current-Continuous@ Current-Pulsed (Note 2) 420 A Maximum Power Dissipation(Tc=25℃) 105 w Maximum Power Dissipation(Tc=100℃) 41 w Avalanche energy (Note 3) 360 mJ ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range -55 To 150 ℃ Thermal Characteristic Symbol Typ Parameter Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 45 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.2 ℃/W www.agm-mos.com 1 VER2.55 AG GM1405C1 C Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 1.5 2.1 V gFS Forward Transconductance VDS=5V,ID=20A -- 16 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 3.0 4.2 mΩ VGS=4.5V, ID=15A -- 3.5 4.9 mΩ -- 2600 -- pF -- 370 -- pF -- 170 -- pF -- 1.7 -- Ω -- 6.9 -- nS -- 1.7 -- nS -- 30 -- nS -- 15 -- nS -- 20 -- nC -- 9 -- nC -- 11 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS= 0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=10V,VDS=15V, RGEN=3.3Ω RL=0.75Ω VGS=10V, VDS=20V, ID=12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VG=VD=0V,Force Current -- -- 130 A VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=40A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.55 AG GM1405C1 C Fig.1 Power Dissipation Fig.2 Typical output Characteristics VGS=10V VGS=4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage www.agm-mos.com Fig.4 Resistance V.S Drain Current Fig.6 On-Resistance V.S Junction Temperature 3 VER2.55 AG GM1405C1 C Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.55 AG GM1405C1 C Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.55 AG GM1405C1 C TO220 PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.300 9.700 0.406 0.382 A1 8.840 8.440 0.348 0.332 A2 1.250 1.050 0.049 0.041 A3 5.300 5.100 0.209 0.201 B 16.200 15.400 0.638 0.606 C 4.680 4.280 0.184 0.169 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 3.800 3.400 0.150 0.134 G 9.300 8.700 0.366 0.343 H 0.600 0.400 0.024 0.016 K 2.700 2.100 0.106 0.083 L 13.600 12.800 0.535 0.504 M 1.500 1.100 0.059 0.043 N 2.590 2.490 0.102 0.098 T DIA www.agm-mos.com W0.35 Φ1.5 TYP. W0.014 deep0.2 TYP. 6 Φ0.059 TYP. deep0.008 TYP. VER2.55 AG GM1405C1 C Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequences.Do not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces and Replace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.55