AGM4005LL

AG GM4005L LL L ● General Description Product Summary The AGM4005LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology RDSON ID 40V 0.82mΩ 350A TOLL-8L Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low BVDSS D Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS ■ POL G 2nd Synchronous Rectifier S application ■ BLDC Pin Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM4005LL AGM4005LL TOLL-8L Table 1. Description 1 Gate(G) 2,3,4,5,6,7,8 Source(S) 9 Drain(D) Reel Size Quantity Tape width ---- ---- 2000 Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Table 2. Value Unit 40 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 350 A Drain Current-Continuous(Tc=100℃) 247 A 1330 A Maximum Power Dissipation(Tc=25℃) 250 w Maximum Power Dissipation(Tc=100℃) 100 w Drain Current-Continuous@ Current-Pulsed (Note 2) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range 1052 mJ -55 To 150 ℃ Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 40 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.5 ℃/W www.agm-mos.com 1 VER2.51 AG GM4005L LL L Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 45 -- V IDSS Zero Gate Voltage Drain Current VDS=32V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.7 2.3 V gFS Forward Transconductance VDS=5V,ID=12A -- -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=40A -- 0.82 1.3 mΩ VGS=4.5V, ID=20A -- 1.7 3 mΩ -- 5440 -- pF -- 1815 -- pF -- 120 -- pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=20V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz -- 1.3 -- Ω Switching Times td(on) Turn-on Delay Time -- 15.7 -- nS tr Turn-on Rise Time -- 48 -- nS -- 75 -- nS -- 42 -- nS -- 81 -- nC -- 18 -- nC -- 15 -- nC -- -- 350 A td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=10V,VDS=20V ID=40A,RGEN=3Ω VGS=10V, VDS=20V, ID=40A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=40A -- 0.8 1.3 V trr Reverse Recovery Time IF=25A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.51 AG GM4005L LL L . Typical Characteristics Power Capability Current Capability 500 350 300 ID - Drain Current (A) 400 Ptot - Power (W) 250 200 150 100 300 200 100 50 o TC=25 C,VG=10V o TC=25 C 0 0 0 20 40 60 80 100 120 140 160 180 Tmp – Mounting Point Temp. (°C) 0 20 60 80 100 120 140 160 Tmp – Mounting Point Temp. (°C) Safe Operating Area Transient Thermal Impedance 3000 Normalized Effective Transient 2 1000 )L im it 100us s( on 300us Rd ID - Drain Current (A) 40 100 1ms 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Single Pulse 0.01 1E-4 100 300 VDS - Drain-Source Voltage (V) www.agm-mos.com 1 1E-3 Mounted on 1in pad o RJC :0.5 C/W 0.01 0.1 1 10 Square Wave Pulse Duration (sec) 3 VER2.51 AG GM4005L LL L . Typical Characteristics (Cont.) Output Characteristics On Resistance 4 50 RDS(ON) - On Resistance (mΩ) VGS= 4,5,6,7,8,9,10V 45 ID - Drain Current (A) 40 35 30 25 20 15 3V 10 5 3 VGS= 4.5V 2 VGS=10V 1 2V 0 0.0 0.2 0.4 0.6 0.8 0 0 1.0 10 20 30 40 50 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 1.8 50 IDS =250A IDS=20A Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) 1.6 40 30 20 10 0 1 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 VGS - Gate-Source Voltage (V) www.agm-mos.com 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 4 VER2.51 AG GM4005L LL L . Typical Characteristics (Cont.) Normalized On Resistance Diode Forward Current 2.2 40 VGS = 10V IDS = 20A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 o Tj=25 C 1 o RON@Tj=25 C: 1.2m 0.2 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.4 0.6 0.8 1.0 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS= 20V VGS - Gate-Source Voltage (V) 7000 Ciss 6000 5000 4000 3000 Coss 2000 1000 Crss 0 0.2 Tj - Junction Temperature (°C) 8000 C - Capacitance (pF) o Tj=150 C 0 5 10 15 20 25 30 35 6 4 2 0 40 VDS - Drain-Source Voltage (V) www.agm-mos.com IDS= 20A 8 0 20 40 60 80 QG - Gate Charge (nC) 5 VER2.51 AG GM4005L LL L Package Dimensions TOLL-8L Package L1 A b1 E1 A1 R b3(3x) D1 H2 H1 c e(6x) e1(2x) E b(6x) Q L2 b2(2x) L L3 K H D D2(2x) D4 E2 BOTTOM VIEW TOP VIEW SYMBOL j i Detail "Z" Detail "Z" www.agm-mos.com 6 A A1 b b1 b2 b3 c D D1 D2 D4 E E1 E2 e e1 H H1 H2 i j K L L1 L2 L3 Q R 0 MILLIMETER NOM. 2.300 1.800 0.700 9.800 0.750 1.200 0.500 10.400 11.100 3.300 4.570 9.900 8.100 0.600 1.200 BSC 1.225 BSC 11.600 11.700 6.950 BSC 5.900 BSC 0.100 REF. 0.350 REF. 3.100 REF. 1.550 1.650 0.600 0.700 0.500 0.600 0.400 0.500 7.950 REF. 3.000 3.100 10˚REE. MIN. 2.200 1.700 0.600 9.700 0.650 1.100 0.400 10.300 11.000 3.200 4.470 9.800 8.000 0.500 MAX. 2.400 1.900 0.800 9.900 0.850 1.300 0.600 10.500 11.200 3.400 4.670 10.000 8.200 0.700 11.800 1.750 0.800 0.700 0.600 3.200 VER2.51 AG GM4005L LL L Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.51