AGM40P100A

AGM40P100A ● General Description Product Summary The AGM40P100A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) BVDSS RDSON ID -40V 4.6mΩ -95A This device is ideal for load switch and battery protection applications. PDFN5*6 Pin Configuration ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM40P100A AGM40P100A PDFN5*6 Reel Size Tape width Quantity ---- 3000 ---- Absolute Maximum Ratings (TA=25℃) Table 1. Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -40 V VGS Gate-Source Voltage (VDS=0V) ±20 V -95 A -65 A -350 A Maximum Power Dissipation(Tc=25℃) 135 w Maximum Power Dissipation(Tc=100℃) 54 w 320 mJ -55 To 150 ℃ Typ Max Unit Drain Current-Continuous(Tc=25℃) (Note 1) ID Drain Current-Continuous(Tc=100℃) IDM (pluse) PD EAS TJ,TSTG Table 2. Drain Current-Continuous@ Current-Pulsed (Note 2) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- -- ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.92 ℃/W www.agm-mos.com 1 VER2.5 AGM40P100A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.6 -2.5 V gFS Forward Transconductance VDS=-15V,ID=-12A 15 -- -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-12A -- 4.6 6.5 mΩ VGS=-4.5V, ID=-12A -- 6.0 8.6 mΩ -- 5700 -- pF -- 520 -- pF -- 350 -- pF -- -- -- Ω -- 41 -- nS -- 12 -- nS -- 308 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=-20V,VGS=0V, F=1MHZ f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 70 -- nS Qg Total Gate Charge -- 106 -- nC Qgs Gate-Source Charge -- 13 -- nC Qgd Gate-Drain Charge -- 24 -- nC -- -- -95 A VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω VGS=-10V, VDS=-20V, ID=-12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-12A -- -- -1.1 V trr Reverse Recovery Time Isd=-12A , -- -- -- ns Qrr Reverse Recovery Charge dI/dt=100A/µs , TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 -ID , Continuous Drain Current (A) AGM40P100A TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Gate to Source Voltage Normalized Gate Threshold Voltage Fig.1 Continuous Drain Current vs. TC Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Continuous Drain Current Normalized Thermal Response T , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance www.agm-mos.com Fig.6 Maximum Safe Operation Area 3 VER2.5 AGM40P100A EAS= VDS 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS 90% VDD IAS 10% VGS Td(on) Tr Ton Fig.7 Td(off) Tf VGS Toff Switching Time Waveform www.agm-mos.com Fig.8 4 EAS Waveform VER2.5 AGM40P100A SYMBOL A MILLIMETER MIN 0.900 0.254 REF. A2 0~0.05 MAX 1.100 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 1.800 REF. L2 k 1.190 1.290 1.390 H 0.549 0.625 0.701 0 8˚ 10˚ 1²˚ Ø d 5 1.000 A1 e www.agm-mos.com Typ. 1.100 1.200 1.300 0.100 VER2.5 AGM40P100A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequences.Do not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on June 10, 2022. This document replaces and Replace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5