AGM412MAP

AGM412MAP ● General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance 22A 13mΩ 40V high cell density Trench technology ID RDSON BVDSS PDFN3*3 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM412M Table 1. Device Device Package Reel Size Tape width Quantity AGM412MAP PDFN3*3 ---- ---- 5000 Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 40 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 22 A Drain Current-Continuous(Tc=100℃) 15 A Drain Current-Continuous@ Current-Pulsed (Note 2) 80 A Maximum Power Dissipation(Tc=25℃) 35 w Maximum Power Dissipation(Tc=100℃) 7.0 w Avalanche energy (Note 3) 15 mJ -55 To 150 ℃ ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Typ Parameter Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.5 ℃/W www.agm-mos.com 1 VER2.5 AGM412MAP Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±40V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.7 2.5 V gFS Forward Transconductance VDS=5V,ID=12A -- -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 13 15 mΩ VGS=4.5V, ID=10A -- 17 22 mΩ -- 475 -- pF -- 75 -- pF -- 45 -- pF -- -- -- Ω -- 6.0 -- nS -- 12 -- nS -- 18 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 7 -- nS Qg Total Gate Charge -- 13 -- nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 2.5 -- nC -- -- 22 A 1.2 V VGS=10V,VDS=15V, ID=10A,RGEN=6.8Ω VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=15A -- 0.86 trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , -- 19 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 26 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM412MAP Normalized Threshold Voltage (Vth) ID, Drain-Source Current (A) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature Normalized On Resistance Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) ID - Drain Current (A) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.agm-mos.com Fig6. Maximum Safe Operating Area 3 VER2.5 AGM412MAP C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Thermal Resistance) ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig 9 . Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms www.agm-mos.com 4 VER2.5 AGM412MAP PDFN3333 Package OutlineData DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 5 VER2.5 AGM412MAP Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5