AGM420MC

AGM420MC ● General Description The AGM420MC combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary BVDSS RDSON ID 40V 18mΩ 7.6A -40V 26mΩ -7.5A This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology SOP8 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D1 ● Application ■MB/VGA Vcore S1 ■SMPS 2nd Synchronous Rectifier ■POL application D2 D1 D2 D2 G1 G1 S2 ■BLDC Motor driver G2 G2 S1 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM420MC AGM420MC SOP8 --mm --mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating P-Ch Units 40 -40 V ±20 ±20 V 7.6 -7.5 A Drain Current-Continuous(Tc=100℃) 5.5 -5.3 A Drain Current-Continuous@ Current-Pulsed (Note 2) 24 -24 A Total Power Dissipation(Tc=25℃) 2.5 2.5 W Total Power Dissipation(Tc=100℃) 1.0 1.0 W EAS Avalanche energy (Note 3) 24 23 mJ TJ,TSTG Operating Junction and Storage Temperature Range Symbol VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) ID IDM (pluse) PD N-Ch Parameter (Note 1) -55 To 150 -55 To 150 ℃ Typ Max Unit Table 2. Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 160 ℃/W RθJC Thermal Resistance Junction-Case1 --- 50 ℃/W www.agm-mos.com 1 VER2.5 AGM420MC Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 1.8 2.2 V gFS Forward Transconductance VDS=5V,ID=6A 15 -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=6A -- 18 24 mΩ VGS=4.5V, ID=6A -- 24 38 mΩ -- 516 -- pF VDS=20V,VGS=0V, F=1MHZ -- 82 -- pF -- 43 -- pF VGS=0V, VDS=0V,f=1.0MHz -- -- -- Ω -- 4.5 -- nS -- 2.5 -- nS -- 14.5 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 3.5 -- nS Qg Total Gate Charge -- 8.9 -- nC Qgs Gate-Source Charge -- 2.4 -- nC Qgd Gate-Drain Charge -- 1.4 -- nC -- -- 7.6 A VGS=10V,VDS=15V, RL=2.5Ω,RGEN=3Ω VGS=10V, VDS=20V, ID=6A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=6A -- 0.8 1.2 V trr Reverse Recovery Time IF=6A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM420MC Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -- -2.4 V gFS Forward Transconductance VDS=-10V,ID=-1A -- 13 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-6A -- 26 34 mΩ VGS=-4.5V, ID=-5A -- 38 49 mΩ -- 1150 -- pF -- 290 -- pF -- 205 -- pF -- -- -- Ω -- -- -- nS -- -- -- nS -- -- -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- -- -- nS Qg Total Gate Charge -- 20 -- nC Qgs Gate-Source Charge -- 8.0 -- nC Qgd Gate-Drain Charge -- 11 -- nC -- -- -7.5 A VGS=-10V,VDS=-20V, ID=-10A,RGEN=6.8Ω VGS=-10V, VDS=-25V, ID=-8A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-6A -- -- -1.28 V trr Reverse Recovery Time IF=-10A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes2.RepetitiveRating: Pulsewidthlimitedby maximumjunction temperatureNotes 3.EAS condition: TJ=25℃ www.agm-mos.com 3 VER2.5 AGM420MC N- Channel Typical Electrical and Thermal Characteristics (Curves) Rl Vin Vgs Rgen Normalized On-Resistance Vdd D Vout G S Figure 1:Switching Test Circuit ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH ID- Drain Current (A) ID- Drain Current (A) Figure 2:Switching Waveforms Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 3 Output Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 4 Transfer Characteristics TJ-Junction Temperature(℃) ID- Drain Current (A) Figure 5 Drain-Source On-Resistance www.agm-mos.com Figure 6 Drain-Source On-Resistance 4 VER2.5 PD Power(W) Rdson On-Resistance(mΩ) AGM420MC TJ-Junction Temperature(℃) Figure7 Rdson vs Vgs Figure 8 Power Dissipation Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vds Drain-Source Voltage (V) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds www.agm-mos.com Figure 12 Safe Operation Area 5 VER2.5 r(t),Normalized Effective Transient Thermal Impedance AGM420MC Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 6 VER2.5 AGM420MC ●P Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics Power Dissipation Pd/Pd MAX.% 1.2 75.0 Drain Current (-A) 1 0.8 0.6 0.4 50.0 VGS=-10V VGS=-4.5V 25.0 0.2 0.0 0 0 0 50 100 150 Temperature (。C) 200 Fig.3 Threshold Voltage V.S Junction Temperature 0.5 1 1.5 Drain-Source voltage (V) 2 Fig.4 Resistance V.S Drain Current Junction Temperature -50 50 150 40 ON Resistance 0 Vgs(th ) -0.5 -1 30 20 10 -1.5 0 -50 -40 -30 -20 Drain Current(A) -2 Fig.5 On-Resistance VS Gate Source Voltage 0 Fig.6 On-Resistance V.S Junction Temperature 80 Normalized ON-Resistance 1.5 70 60 RDson(mΩ) -10 50 40 30 20 10 1 0.5 -50 0 3 www.agm-mos.com 5 7 VGS( -V ) 9 7 0 50 100 Temperature 150 VER2.5 AGM420MC Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 8 VER2.5 AGM420MC ●Dimensions(SOP8) SYMBOL min TYP max SYMBOL min max A 4.80 5.00 C 1.30 1.50 A1 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D B2 www.agm-mos.com 5.00 D1 9 0.20 0.23 1.05 0.40 0.62 VER2.5 AGM420MC Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 10 VER2.5