AGM425M

AGM425M ● General Description The AGM425M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary BVDSS RDSON ID 40V 25mΩ 6.6A -40V 65mΩ -5.5A This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology SOP8 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D1 ● Application ■MB/VGA Vcore S1 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver D2 D1 D2 D2 G1 G1 S2 G2 G2 S1 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM425M AGM425M SOP8 --mm --mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage (VGS=0V） 40 -40 V VGS Gate-Source Voltage (VDS=0V) ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 6.6 -5.5 A Drain Current-Continuous(Tc=100℃) 4.3 -3.7 A Drain Current-Continuous@ Current-Pulsed (Note 2) 17 -15 A Total Power Dissipation(Tc=25℃) 1.3 2.0 W Total Power Dissipation(Tc=100℃) 0.7 0.7 W EAS Avalanche energy (Note 3) 22 18 mJ TJ,TSTG Operating Junction and Storage Temperature Range ID IDM (pluse) PD -55 To 150 -55 To 150 ℃ Typ Max Unit Table 2. Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- -- ℃/W www.agm-mos.com 1 VER2.5 AGM425M Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 1.5 2.5 V gFS Forward Transconductance VDS=5V,ID=6A -- -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=5A -- 25 37 mΩ VGS=4.5V, ID=3A -- 41 60 mΩ -- 495 -- pF VDS=20V,VGS=0V, F=1MHZ -- 42 -- pF -- 33 -- pF VGS=0V, VDS=0V,f=1.0MHz -- -- -- Ω -- 15 -- nS -- 49.5 -- nS -- 19.2 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 11 -- nS Qg Total Gate Charge -- 10 -- nC Qgs Gate-Source Charge -- 1.4 -- nC Qgd Gate-Drain Charge -- 1.9 -- nC -- -- 6.6 A VGS=10V,VDS=20V, ID=3.5A,RGEN=3Ω VGS=10V, VDS=20V, ID=3.5A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=1A -- -- 1.2 V trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM425M Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.9 -2.5 V gFS Forward Transconductance VDS=-15V,ID=-3.1A 10 -- -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-5A -- 65 80 mΩ VGS=-4.5V, ID=-4A -- 92 120 mΩ -- 600 -- pF VDS=-20V,VGS=0V, F=1MHZ -- 90 -- pF -- 70 -- pF VGS=0V, VDS=0V,f=1.0MHz -- -- -- Ω -- 9 -- nS -- 8 -- nS -- 28 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 10 -- nS Qg Total Gate Charge -- 14 -- nC Qgs Gate-Source Charge -- 2.9 -- nC Qgd Gate-Drain Charge -- 3.8 -- nC -- -- -5.5 A VGS=-10V,VDS=-20V, RL=2Ω,RGEN=3Ω VGS=-10V, VDS=-20V, ID=-5A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-5A -- -- -1.2 V trr Reverse Recovery Time IF=-5A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes2.RepetitiveRating: Pulsewidthlimitedby maximumjunction temperatureNotes 3.EAS condition: TJ=25℃ www.agm-mos.com 3 VER2.5 AGM425M Typical Characteristics 15 10 VGS = 10V VDS= 3V VGS = 6V VGS = 4.5V 8 Drain current ID (A) Drain current ID (A) 12 VGS = 3V 9 6 VGS = 2.5V 3 0 6 4 2 0 1 2 3 4 Drain−source voltage VDS (V) 0 5 0 Figure 1. Output Characteristics 1 2 3 4 Gate−source voltage VGS (V) Figure 2. Transfer Characteristics 5 250 ID= 5A On-Resistance RDS (on) (mΩ) Source current IS (A) 4 3 2 1 0 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 0 3 Source−drain voltage VSD (V) Figure 3. Forward Characteristics of Reverse 12 15 2.5 2.0 60 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 9 Figure 4. RDS(ON) vs. VGS 80 VGS = 4.5V 40 VGS = 10V 20 0 6 Gate−source voltage VGS (V) 1.5 1.0 0.5 0.0 0 1 2 3 4 5 Drain current ID (A) Figure 5. RDS(ON) vs. ID www.agm-mos.com -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature 4 VER2.5 AGM425M 10000 Capacitance（pF） 1000 Ciss 100 Coss Crss 10 F=1.0MHz 1 0 10 20 30 Drain-source voltage VDS（V） 40 Figure 7. Capacitance Characteristics www.agm-mos.com Figure 8. Gate Charge Characteristics 5 VER2.5 AGM425M Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.agm-mos.com Figure 6 Drain-Source On-Resistance 6 VER2.5 ID- Drain Current (A) Normalized On-Resistance AGM425M TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.agm-mos.com Figure 12 Source- Drain Diode Forward 7 VER2.5 ID- Drain Current (A) AGM425M Vds Drain-Source Voltage (V) Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 8 VER2.5 AGM425M ●Dimensions(SOP8) SYMBOL min TYP max SYMBOL min max A 4.80 5.00 C 1.30 1.50 A1 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D B2 www.agm-mos.com 5.00 D1 9 0.20 0.23 1.05 0.40 0.62 VER2.5 AGM425M Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 10 VER2.5