AGM425MC

AGM425MC ● General Description The AGM425MC combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary BVDSS RDSON ID 40V 18mΩ 7.6A -40V 34mΩ -6.5A This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology SOP8 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D1 ● Application ■MB/VGA Vcore S1 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver D2 D1 G1 G1 S2 D2 D2 G2 S1 G2 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width AGM425MC AGM425MC SOP8 --mm --mm Quantity 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage (VGS=0V） 40 -40 V VGS Gate-Source Voltage (VDS=0V) ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 7.6 -6.5 A Drain Current-Continuous(Tc=100℃) 5.5 -4.2 A Drain Current-Continuous@ Current-Pulsed (Note 2) 24 -24 A Total Power Dissipation(Tc=25℃) 2.4 3.0 W Total Power Dissipation(Tc=100℃) 1.0 1.2 W Avalanche energy (Note 3) 24 18 mJ ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 -55 To 150 ℃ Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W www.agm-mos.com 1 VER2.5 AGM425MC Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.8 2.5 V gFS Forward Transconductance VDS=5V,ID=10A -- 15 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=6A -- 18 24 mΩ VGS=4.5V, ID=5A -- 24 38 mΩ --- --- pF pF VDS=20V,VGS=0V, F=1MHZ 516 593 --- 82 76 --- pF pF --- pF p VGS=0V, VDS=0V,f=1.0MHz VDS=0V,f=1.0MHz 43 56 -- -. -- Ω --- 4.5 8.9 --- nS nS --- 2.5 2.2 --- nS nS --- 14.5 41 --- nS nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Switching Times w c ng mes td(on) td(on) tr r Turn-on Delay Time urn-on e ay me td(off) td(off) Turn-Off Delay Time urne ay me Turn-on Rise Time urn-on se me VGS=10V,VDS=15V, RL=2.5Ω,RGEN=3Ω --- tf tf Turn-Off Fall Time urna me --- 3.5 2.7 --- nS nS Qg Qg Total Gate Charge oa ae arge --- --- nC nC Qgs gs Gate-Source Charge a e- ource arge 8.9 5.5 --- nC nC Qgd gd Gate-Drain Charge a e- ra n arge --- nC nC VGS=10V, VDS=20V, ID=6A ----- 2.4 1.25 1.4 2.5 Source-Drain Diode Characteristics ISD SD Source-Drain Current(Body Diode) ource- ra n urren o y o e --- --- 7.6 23 A A V V ns VSD SD Forward on Voltage orwar on o age VGS=0V,IS=6A = , = --- --- 1.2 1.2 trr trr Reverse Recovery Time Reverse Recovery Time IF=6A , dI/dt=100A/µs , Qrr Qrr Reverse Recovery Charge Reverse Recovery harge ----- ----- ----- TJ=25℃ nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM425MC Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.0 -1.5 -2.5 V gFS Forward Transconductance VDS=-5V,ID=-10A -- 16 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-5A -- 34 45 mΩ VGS=-4.5V, ID=-3A -- 44 58 mΩ VDS=-20V,VGS=0V, F=1MHZ -- 1080 -- pF -- 87 -- pF -- 77 -- pF -- 10.3 -- Ω -- 5.9 -- nS -- 7.1 -- nS -- 25 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 8.2 -- nS Qg Total Gate Charge -- 17 -- nC -- 4.2 -- nC -- 3.7 -- nC -- -- -6 A Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=-10V,VDS=-20V, ID=-5A,RGEN=3Ω VGS=-10V, VDS=-20V, ID=-6A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-5A -- -- -1.2 V trr Reverse Recovery Time IF=-5A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes2.RepetitiveRating: Pulsewidthlimitedby maximumjunction temperatureNotes 3.EAS condition: TJ=25℃ www.agm-mos.com 3 VER2.5 AGM425MC N- Channel Typical Electrical and Thermal Characteristics (Curves) Rl Vin Vgs Rgen Normalized On-Resistance Vdd D Vout G S Figure 1:Switching Test Circuit ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms . - ID- Drain Current (A) ID- Drain Current (A) - Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 3 Output Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 4 Transfer Characteristics TJ-Junction Temperature(℃) ID- Drain Current (A) Figure 5 Drain-Source On-Resistance www.agm-mos.com Figure 6 Drain-Source On-Resistance 4 VER2.5 PD Power(W) Rdson On-Resistance(mΩ) AGM425MC TJ-Junction Temperature(℃) Figure7 Rdson vs Vgs Figure 8 Power Dissipation Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vds Drain-Source Voltage (V) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds www.agm-mos.com Figure 12 Safe Operation Area 5 VER2.5 r(t),Normalized Effective Transient Thermal Impedance AGM425MC Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 6 VER2.5 AGM425MC P-Channel Typical Characteristics 30 30 VDS= -5V VGS = -10V VGS = -3.5V VGS = -3.5V 20 10 0 Drain current -ID (A) Drain current -ID (A) VGS = -4.5V VGS = -3V 0 1 2 3 4 Drain−source voltage -VDS (V) 20 10 0 5 Figure 1. Output Characteristics On-Resistance RDS (on) (mΩ) Source current -IS (A) 4 0.2 0.4 0.6 0.8 1.0 5 150 100 50 0 1.2 ID= -5A 200 Source−drain voltage -VSD (V) 3 0 6 9 12 15 Gate−source voltage -VGS (V) Figure 3. Forward Characteristics of Reverse Figure 4. RDS(ON) vs. VGS 2.5 80 2.0 60 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 3 250 1 VGS = -4.5V 40 VGS = -10V 20 0 2 Gate−source voltage -VGS (V) Figure 2. Transfer Characteristics 10 0.1 1 0 1.5 1.0 0.5 0 2 4 6 8 0.0 10 Drain current -ID (A) Figure 5. RDS(ON) vs. ID www.agm-mos.com -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature 7 VER2.5 AGM425MC 10000 Ciss Capacitance（pF） 1000 100 Coss Crss 10 1 F=1.0MHz 0 10 20 30 Drain-source voltage -VDS（V） 40 Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 4 3 Drain current -ID (A) Power Dissipation PD(W) 100 2 1 0 10 25 50 75 100 Ambient Temperature TA (°C) 125 100μs 1 Limited by RDS(on) DC 1ms 0.1 0.01 0 10μs 150 10ms Single Pulse TC=25℃ TJ=150℃ 0.1 Figure 9. Power Dissipation 1 10 100 Drain−source voltage -VDS (V) Figure10. Safe Operating Area Normalized RθJA℃/W) 10 1 Duty = 1.0 Duty = 0.5 0.1 Duty = 0.2 Duty = 0.1 Duty = 0.05 0.01 Duty = 0.02 Duty = 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Pulse Width(S) Figure 11. Normalized Maximum Transient Thermal Impedance www.agm-mos.com 8 VER2.5 AGM425MC Test Circuit VGS Qg RL VDS VGS Qgs Qgd DUT IG=const Figure A. Gate Charge Test Circuit & Waveforms RL VDS RG VDD VGS DUT VGS Figure B. Switching Test Circuit & Waveforms L VDS ID RG VDD DUT VGS tp Figure C. Unclamped Inductive Switching Circuit & Waveforms www.agm-mos.com 9 VER2.5 AGM425MC ●Dimensions(SOP8) SYMBOL min A A1 TYP max SYMBOL min max 4.80 5.00 C 1.30 1.50 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D 5.00 D1 0.23 1.05 0.40 0.62 A E2 E L2 B2 0.20 www.agm-mos.com 10 VER2.5 AGM425MC Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on August 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 11 VER2.5