AGM6035A

AGM6035A ● General Description Product Summary The AGM6035A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance RDSON ID 60V 2.4mΩ 100A PDFN5*6 Pin Configuration high cell density Trench technology ■ Low BVDSS ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM6035A AGM6035A PDFN5*6 Table 1. Reel Size Tape width Quantity ---- 3000 ---- Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Unit VDS Drain-Source Voltage (VGS=0V） 60 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 100 A Drain Current-Continuous(Tc=100℃) 86 A Drain Current-Continuous@ Current-Pulsed (Note 2) 270 A Maximum Power Dissipation(Tc=25℃) 83 w Maximum Power Dissipation(Tc=100℃) 33 w Avalanche energy (Note 3) 200 mJ -55 To 150 ℃ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Typ Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 55 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.5 ℃/W www.agm-mos.com 1 VER2.5 AGM6035A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 -- -- V IDSS Zero Gate Voltage Drain Current VDS=48V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.6 2.5 V gFS Forward Transconductance VDS=5V,ID=12A -- 65 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 2.4 3.0 mΩ VGS=4.5V, ID=7A -- 3.3 4.2 mΩ -- 2800 -- pF -- 1170 -- pF -- 68 -- pF -- 1.1 -- Ω -- 20 -- nS -- 9.0 -- nS -- 60 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=30V,VGS=0V, F=100MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 15 -- nS Qg Total Gate Charge -- 59 -- nC Qgs Gate-Source Charge -- 15 -- nC Qgd Gate-Drain Charge -- 10 -- nC -- -- 100 A VGS=10V,VDS=30V, ID=20A,RGEN=3.3Ω VGS=10V, VDS=30V, ID=20A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.0 V trr Reverse Recovery Time IS=20A , dI/dt=100A/µs , -- 24 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 84 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM6035A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Diode Forward Voltage vs. Current Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ www.agm-mos.com 3 VER2.5 AGM6035A Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.agm-mos.com Fig.11 Unclamped Inductive Switching Waveform 4 VER2.5 AGM6035A H D2 D L1 Dimensions:PDFN5*6 SYMBOL A MILLIMETER MIN Typ. MAX 0.900 1.000 1.100 A1 A2 k L E2 E E1 L2 D1 e b 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. L 0.534 L1 0.424 d L2 0.686 0.500 0.576 k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.200 1.300 d 5 0.610 1.800 REF. 1.100 A A1 A2 www.agm-mos.com 0.254 REF. 0.100 VER2.5 AGM6035A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on September 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5