CT03NR005Q

CT03NR005Q »Features ￭ Simple Drive Requirement ￭ Small Size & Low RDS(ON) BVDSS 30 V ￭ RoHS Compliant & Halogen-Free RDS(ON)typ 4.45 mΩ PDFN3*3 »Description CT03NR005Q is from Coretong innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of The package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal. »Schematic & PIN Configuration PDFN3x3 www.coretong.com 1/6 CT03NR005Q »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol ID@T C=25℃ Drain Current, V GS @ 10V 4 Rating 30 ±20 40 Units V V A ID@T A=25 ℃ Drain Current, V GS @ 10V 3 20 A ID@T A=70℃ Drain Current, V GS @ 10V 3 IDM Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range 15.6 A 120 A 3 W -55 to 150 ℃ -55 to 150 ℃ Value 4 40 Unit ℃/W ℃/W VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter Operating Junction Temperature Range TJ »Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=1mA 30 - - V VGS=10V, ID=19A - 4.45 4.8 mΩ VGS=4.5V, ID=12A 1 6.15 1.3 7.5 2.3 mΩ V VGS(th) Gate Threshold Voltage VDS=V GS, ID=250uA gfs Forward Transconductance - 69 - S IDSS Drain-Source Leakage Current VDS=10V, ID=19A VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA ID=16A VDS=15V VGS=4.5V - 11 - nC - 2 - nC - 7 - nC - 11 59 - ns ns - 29 - ns - 13 - ns VGS=0V VDS=15V f=1.0MHz - 1100 - pF - 350 - pF - 140 - pF f=1.0MHz - 1.1 - Ω Qg Total Gate Charge2 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) tr Turn-on Delay Time Rise Time td(off) Turn-off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=15V ID=19A RG=3.3Ω VGS=10V Test Conditions Min. Typ. Max. Units IS=19A, VGS=0V - - 1.2 V IS=20A, VGS=0V dI/dt=100A/µs - 15 - ns - 6 - nC www.coretong.com 2/6 CT03NR005Q Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 3. Surface mounted on 1 in2 2oz copper pad of FR4 board, t