CT03NR007Q

CT03NR007Q »Features ￭ Simple Drive Requirement ￭ Small Size & Low RDS(ON) BVDSS ￭ RoHS Compliant & Halogen-Free RDS(ON)typ 6.5 mΩ ID 15.5 A 30 V PDFN3*3 »Description CT03NR007Q is from Coretong innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. »Schematic & PIN Configuration PDFN3x3 www.coretong.com 1/6 CT03NR007Q »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Rating 30 ±20 15.5 ID@TA=70℃ IDM Drain Current, VGS @ 10V3 12.4 A 60 A 3.2 W -55 to 150 ℃ -55 to 150 ℃ Value 5 35 Unit ℃/W ℃/W Current1 Pulsed Drain PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range Operating Junction Temperature Range TJ Units V V A »Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=12A - 6.5 10.8 8.5 13 mΩ mΩ VGS(th) Gate Threshold Voltage VGS=4.5V, ID=8A VDS=VGS, ID=250uA 1 1.3 3 V gfs Forward Transconductance VDS=10V, ID=12A - 24 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge2 ID=12A VDS=15V VGS=4.5V - 12 - nC - 6 5.5 - nC nC - 10 - ns - 5 - ns - 27 - ns - 7 - ns - 1050 170 - pF pF - 150 - pF - 2 - Ω Min. Typ. Max. Units Qgd Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Ciss Fall Time VDS=15V ID=1A RG=3.3Ω VGS=10V Coss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance VGS=0V VDS=15V f=1.0MHz Rg Gate Resistance f=1.0MHz »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=2.9A, VGS=0V - - 1.2 V IS=12A, VGS=0V dI/dt=100A/µs - 21 - ns - 12 - nC www.coretong.com 2/6 CT03NR007Q Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t