CT03NR013Q

CT03NR013Q »Features ￭ Simple Drive Requirement ￭ Small Size & Low RDS(ON) BVDSS 30 V ￭ RoHS Compliant & Halogen-Free RDS(ON)typ 13 mΩ ID 8A PDFN3*3 »Description CT03NR013Q is from Coretong innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. »Schematic & PIN Configuration PDFN3x3 www.coretong.com 1/6 CT03NR013Q »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Parameter Rating 30 ±20 8 7 Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Units V V A A A W mJ 40 3 5 -55 to 150 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range Operating Junction Temperature Range TJ 150 ℃ ℃ Value 8 40 Unit ℃/W ℃/W »Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units 30 - - V VGS=4.5V, ID=6A - 13 23 14 29 mΩ mΩ VGS=0V, ID=250uA VGS=10V, ID=8A VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 27 - S Drain-Source Leakage Current Gate-Source Leakage VDS=24V, VGS=0V - - 10 ±100 uA nA Qg Qgs Total Gate Charge2 - 5 - nC - 2 - nC Qgd td(on) Gate-Drain ("Miller") Charge Turn-on Delay Time ID=1A VDS=15V VGS=4.5V - 1.8 7 - nC ns tr Rise Time - 8 - ns td(off) Turn-off Delay Time Fall Time - 15 3 - ns ns - 530 - pF - 90 - pF - 60 2.5 - pF Ω Min. Typ. Max. Units IDSS IGSS tf Gate-Source Charge Ciss Coss Input Capacitance Crss Rg Reverse Transfer Capacitance Gate Resistance Output Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=±20V, VDS=0V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz f=1.0MHz Test Conditions IS=1.7A, VGS=0V - - 1.2 V IS=6A, VGS=0V dI/dt=100A/µs - 7.5 - ns - 2 - nC www.coretong.com 2/6 CT03NR013Q Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t