CT10N65FL

CT10N65FL N-Channel MOSFET 10A 650V N Channel MOSFET Feactures  VDS = 650V  ID = 10A @VGS =10V  RDS(ON) (Typ)=0.74Ω @VGS =10V Applications  Power Supply  PFC  High Current, High Speed Switching Des c rip tions  高压 High Current, High Speed Switc a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications. Rev_1.8_Nov 2022 www.coretong.com 1/6 CT10N65FL N-Channel MOSFET Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 650 V Drain Current ID(Tc=25℃) 10 A Drain Current ID(Tc=100℃) 5.7 A Drain Current - Pulsed IDM 38 A Gate-Source Voltage VGSS ±30 V Single Pulsed Avalanche Energy EAS 700 mJ Repetitive Avalanche Energy EAR 15.6 mJ Avalanche Current IAR 9.5 A Power Dissipation PD(Tc=25℃) 52 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W Thermal Resistance, Junction to Case RθJC 2.4 ℃/W Electrical Characteristics(Ta=25℃) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance VGS=0V ID=250μA Min Typ Max 650 Unit V VDS=600V VGS=0V 1.0 μA VDS=480V TC=125℃ 10 μA IGSS VGS=±30V VDS=0V ±10 μA VGS(th) VDS=VGS 4.0 V RDS(on) VGS=10V 0.85 Ω IDSS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD Rev_1.8_Nov 2022 Test Conditions D=250μA ID=4.75A VDS=25V VGS=0V f=1.0MHz VDS= 520V, ID= 10.0A, VGS= 10V www.coretong.com 2.0 0.74 1200 130 pF 25 45 6.8 nC 19 2/6 CT10N65FL N-Channel MOSFET Electrical Characteristics(Ta=25℃) Parameter Symbol Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS 10 A ISM 38 A 1.4 V Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Rev_1.8_Nov 2022 Test Conditions Min Typ Max Unit 25 VDD=325V ID=10A RG=25Ω 72 ns 150 80 VGS = 0 V, IS = 4.0A VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs www.coretong.com 430 nS 4300 nC 3/6 CT10N65FL N-Channel MOSFET Electrical Characteristic Curve Rev_1.8_Nov 2022 www.coretong.com 4/6 CT10N65FL N-Channel MOSFET Marking Instructions COT G 10N65 **** Note: COT: Company Logo G: Halogen Free 10N65: Product Type. ****: Lot No. Code, code change with Lot No. Packaging SPEC. TUBE INFORMATION Package Type Units Dimension (unit：mm3) Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 50 20 1,000 5 5,000 TO-220FL Rev_1.8_Nov 2022 www.coretong.com Tube 532×33×7.0 Inner Box 555×164×50 Outer Box 575×290×180 5/6 CT10N65FL N-Channel MOSFET Package Outline Dimensions Rev_1.8_Nov 2022 www.coretong.com 6/6