CT10NR005B

CT10NR005B N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Fast Switching Speed ￭ Ultra_Low RDS(ON) BVDSS 100V ￭ RoHS Compliant & Halogen-Free RDS(ON)Typ ID 4.5mΩ 85A »Description CT10NR005B is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. »Schematic & PIN Configuration PDFN5x6 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Parameter Rating 100 ±20 Units V V Drain Current, VGS @ 10V 85 A ID@TC=100℃ Drain Current, VGS @ 10V IDM Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation PD@TC=25℃ Total Power Dissipation 52 A PD@TC=100℃ Total Power Dissipation IAS Avalanche Current, Single pulse2 EAS Avalanche Energy, Single pulse2 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 www.coretong.com 140 A 5 W 85 W 34 W 16 A 15 mJ -55 to 150 ℃ 150 ℃ Value 1.4 50 Unit ℃/W ℃/W 1/6 CT10NR005B N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@T =25 oC(unless otherwise specified) j Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance4 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 100 - - V VGS=10V, ID=20A - 4.6 5.5 mΩ VGS=4.5V, ID=10A - 6.6 9 mΩ VGS(th) Gate Threshold Voltage VDS=V GS, ID=250uA 1 2 3 V gfs Forward Transconductance VDS=5V, ID=20A - 45 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge - 71 - nC - 12 - nC Qgd Gate-Drain ("Miller") Charge ID=20A VDS=50V VGS=10V - 21 - nC td(on) Turn-on Delay Time - 18 - ns tr td(off) Rise Time - 13 - ns - 12 - ns tf Ciss Fall Time - 110 - ns 4200 - pF Output Capacitance - 3200 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=50V f=1.0MHz - Coss - 1000 - pF Rg Gate Resistance f=1.0MHz - 0.5 - Ω Test Conditions IS=20A, VGS=0V Min. Typ. Max. Units - 0.85 1.1 V IS=20A, VR=50V dI/dt=100A/µs - 56 - ns - 110 - nC Gate-Source Charge VDS=50V ID=1A RG=3Ω VGS=10V Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage 4 trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Maximum current limited by bonding wire 2. UIS tested pulse width are limited by maximum junction temperature 150℃ 3. Surface mounted on 1 in2 2oz copper pad of FR4 board, t