CT10NR009B

CT10NR009B N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Driver Requirement ￭ Low On-resistance BVDSS ￭ RoHS Compliant & Halogen-Free RDS(ON)Typ ID 100V 8.1mΩ 50A »Description CT10NR009B is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID@TC=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V IDM Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation PD@TC=25℃ Total Power Dissipation PD@TC=100℃ Total Power Dissipation EAS Avalanche Energy, Single pulse4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating 100 ±20 50 Units V V A 31 A 105 A 5 W 41.6 W 30 W 15 mJ -55 to 150 ℃ 150 ℃ Value 3 30 Unit ℃/W ℃/W 1/6 CT10NR009B N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@T =25 oC(unless otherwise specified) j Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 100 - - V VGS=10V, ID=20A - 8.1 9.5 mΩ VGS=4.5V, ID=10A - 11.4 14.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 2 3 V gfs Forward Transconductance VDS=5V, ID=20A - 34 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge - 17 - nC - 5 - nC Qgd Gate-Drain ("Miller") Charge ID=20A VDS=50V VGS=10V - 12 - nC td(on) Turn-on Delay Time - 16 - ns tr td(off) Rise Time - 65 - ns - 26 - ns tf Ciss Fall Time - 51 - ns - 2550 - pF Coss Output Capacitance Crss Rg Gate-Source Charge Turn-off Delay Time Input Capacitance - 1850 - pF Reverse Transfer Capacitance VGS=0V VDS=50V f=1.0MHz - 575 - pF Gate Resistance f=1.0MHz - 1.1 - Ω Min. Typ. Max. Units IS=20A, VGS=0V - 0.84 1.1 V IS=20A, VR=50V dI/dt=100A/µs - 49 - ns - 61 - nC »Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time Qrr VDS=50V ID=1A RG=3Ω VGS=10V Reverse Recovery Charge Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse Test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t