CT12N65FL
N-Channel MOSFET
12A 650V N Channel MOSFET
Feactures
VDS =650V
ID = 12A @VGS = 10V
RDS(ON) (Typ)= 0.62Ω @ VGS =10V
Applications
Power Supply
PFC
High Current, High Speed Switching
Des c rip tions
高压 High Current, High Speed Switching
a
These N-channel MOSFET are produced using
advanced plane MOSFET Technology, which provides
Low on-state resistance,high switching performance
and excellent quality.
These devices are suitable device for SMPS,high
Speed switching and general purpose applications.
Rev_1.7_Mar 2020
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1/6
CT12N65FL
N-Channel MOSFET
Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
650
V
Drain Current
ID(Tc=25℃)
12
A
Drain Current
ID(Tc=100℃)
7.6
A
Drain Current - Pulsed
IDM
48
A
Gate-Source Voltage
VGS
±30
V
Single Pulsed Avalanche Energy
EAS
880
mJ
Repetitive Avalanche Energy
EAR
25
mJ
Avalanche Current
IAR
12
A
Power Dissipation
PD
54
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
℃
Junction to Ambient
RθJA
62.5
℃/W
Junction to Case
RθJC
2.3
℃/W
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Drain-Source Breakdown Voltage BVDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Input Capacitance
VGS=0V
ID=250μA
Min
Typ
Max
650
Unit
V
IDSS
VDS=650V
VGS=0V
1.0
μA
IGSS
VGS=±30V
VDS=0V
±100
nA
4.0
V
0.78
Ω
VGS(th)
VDS=VGS
RDS(on)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Rev_1.7_Mar 2020
Test Conditions
VGS=10V
ID=250μA
ID=6A
VDS=25V
VGS=0V
f=1.0MHz
VDS= 520V, ID= 12A,
VGS= 10V
www.coretong.com
2.0
0.62
2200
290
pF
50
43
8.8
nC
20
2/6
CT12N65FL
N-Channel MOSFET
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
IS
12
A
ISM
48
A
1.4
V
Drain-Source Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Rev_1.7_Mar 2020
Test Conditions
Min
Typ
Max
Unit
32
VDD=325V
ID=12A
RG=25Ω
117
ns
98
88
VGS = 0 V,
IS = 12A
VGS = 0V, IS = 12A,
dIF/dt = 100 A/μs
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390
nS
3550
nC
3/6
CT12N65FL
N-Channel MOSFET
Electrical Characteristic Curve
Rev_1.7_Mar 2020
www.coretong.com
4/6
CT12N65FL
N-Channel MOSFET
Marking Instructions
COT G
12N65
****
Note:
COT:
Company Logo
G:
Halogen Free
12N65:
Product Type.
****:
Lot No. Code, code change with Lot No.
Packaging SPEC.
TUBE INFORMATION
Package Type
Units
Dimension (unit:mm3)
Units/Tube
Tubes/Inner Box
Units/Inner Box
Inner Boxes/Outer Box
Units/Outer Box
50
20
1,000
5
5,000
TO-220FL
Rev_1.7_Mar 2020
www.coretong.com
Tube
532×33×7.0
Inner Box
555×164×50
Outer Box
575×290×180
5/6
CT12N65FL
N-Channel MOSFET
Package Outline Dimensions
Rev_1.7_Mar 2020
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6/6
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