CT13N50FL

CT13N50FL N-Channel MOSFET 13A 500V N Channel MOSFET Feactures  VDS=500V  ID=13A@ VGS=10V  RDS(ON) (Typ)=0.37Ω @VGS=10V Applications  Power Supply  PFC  High Current, High Speed Switching Des c rip tions  高压 High Current, High Speed Switching a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications. Rev_2.0_Mar 2020 www.coretong.com 1/6 CT13N50FL N-Channel MOSFET Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 500 V ID(Tc=25℃) 13 A ID(Tc=100℃) 8 A Drain Current - Pulsed IDM 52 A Gate-Source Voltage VGSS ±30 V Single Pulsed Avalanche Energy EAS 860 mJ Repetitive Avalanche Energy EAR 19.5 mJ Avalanche Current IAR 13 A Power Dissipation PD(Tc=25℃) 35 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Junction to Ambient RθJA 62.5 ℃/W Junction to Case RθJC 3.57 ℃/W Drain Current Electrical Characteristics(Ta=25℃) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance VGS=0V VDS=500V IDSS VDS=400V IGSS VGS=±30V VGS(th) RDS(on) Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD Rev_2.0_Mar 2020 Test Conditions VDS=VGS VGS=10V ID=250μA Typ Max 500 Unit V VGS=0V 1.0 μA TC=125℃ 10 μA VDS=0V ±0.1 μA 4.0 V 0.48 Ω ID=250μA ID=6.5A VDS=25V VGS=0V f=1.0MHz VDS= 400V, ID= 13A, VGS= 10V www.coretong.com Min 2.0 0.37 2000 270 pF 10 62 18 nC 25 2/6 CT13N50FL N-Channel MOSFET Electrical Characteristics(Ta=25℃) Parameter Symbol Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS 13 A ISM 52 A 1.4 V Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Rev_2.0_Mar 2020 Test Conditions Min Typ Max Unit 29 VDD=400V ID=13A RG=25Ω 26 ns 145 38 VGS = 0 V, IS = 4.0A VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs www.coretong.com 385 nS 5550 nC 3/6 CT13N50FL N-Channel MOSFET Electrical Characteristic Curve Rev_2.0_Mar 2020 www.coretong.com 4/6 CT13N50FL N-Channel MOSFET Marking Instructions COT G 13N50 5 **** Note: COT: Company Logo G: Halogen Free 13N50: Product Type. ****: Lot No. Code, code change with Lot No. Packaging SPEC. TUBE INFORMATION Package Type Units Dimension （unit：mm3） Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 50 20 1,000 5 5,000 TO-220FL Rev_2.0_Mar 2020 www.coretong.com Tube 532×33×7.0 Inner Box 555×164×50 Outer Box 575×290×180 5/6 CT13N50FL N-Channel MOSFET Package Outline Dimensions Rev_2.0_Mar 2020 www.coretong.com 6/6