CT2301M

CT2301M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Drive Requirement ￭ Small Package Outline BVDSS ￭ Surface Mount Device ￭RoHS Compliant & Halogen-Free RDS(ON)typ ID -20V 95mΩ -2A »Description CT2301M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID-Continuous IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating -20 ±8 -2 Units V V A -10 A 0.35 W -55 to 150 ℃ 150 ℃ Value 357 Unit ℃/W 1/4 CT2301M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA -20 - - V VGS=4.5V, ID=-2A - 95 130 mΩ VGS=-2.5V, ID=-2A - 130 175 mΩ -0.5 - -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=-2A - 4 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±8V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge ID=-2A VDS=-10V VGS=-2.5V - 5.5 - nC - 3.3 - nC - 1.3 - nC - 11 20 ns - 35 60 ns - 30 50 ns - 10 20 ns - 405 - pF - 75 - pF - 55 - pF Min. Typ. Max. Units - -0.8 -1.2 V Qgd Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr td(off) Rise Time tf Ciss Fall Time Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD VDS=-10V ID=1A RG=1Ω VGS=-4.5V,RL=10Ω Forward On Voltage² VGS=0V VDS=-10V f=1.0MHz Test Conditions IS=0.7A, VGS =0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t