CT2302M

CT2302M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Drive Requirement ￭ Small Package Outline BVDSS RDS(ON)typ ￭ Surface Mount Device ￭ RoHS Compliant & Halogen-Free ID 20V 43mΩ 2A »Description CT2302M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID-Continuous IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating 20 ±12 2 Units V V A 10 A 0.225 W -55 to 150 ℃ 150 ℃ Value 350 Unit ℃/W 1/4 CT2302M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. Max. Units 20 - - V VGS=4.5V, ID=2A - 43 56 mΩ VGS=2.5V, ID=2A - 55 85 mΩ 0.4 0.65 1 V VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=-2A 4 - - S IDSS Drain-Source Leakage Current VDS=19V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±12V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge ID=2A VDS=10V VGS=4.5V - 3.4 - nC - 0.6 - nC - 1.6 - nC - 2 - ns - 10 - ns - 8 - ns - 3 - ns - 270 - pF - 35 - pF - 25 - pF Test Conditions Min. Typ. Max. Units IS=2A, VGS =0V - - 1.2 V Qgd Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr td(off) Rise Time tf Ciss Fall Time Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=10V ID=2A RG=6Ω VGS=4.5V,RL=2.8Ω Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² VGS=0V VDS=10V f=1.0MHz Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t