CT2305M

CT2305M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Drive Requirement ￭ Small Package Outline BVDSS -12V ￭ Surface Mount Device ￭ RoHS Compliant & Halogen-Free RDS(ON)typ 40mΩ ID -4.1A »Description CT2305M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID-Continuous IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating -12 ±8 -4.1 Units V V A -16 A 0.4 W -55 to 150 ℃ 150 ℃ Value 313 Unit ℃/W 1/5 CT2305M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA -12 - - V VGS=4.5V, ID=-3.5A - 40 50 mΩ Static Drain-Source On-Resistance VGS=-2.5V, ID=-3.0A - 55 65 mΩ VGS=-1.8V, ID=-2.0A - 90 120 mΩ -0.5 - -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=-4.1A 6 - - S IDSS Drain-Source Leakage Current VDS=-8V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±8V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge ID=-4.1A VDS=-4V VGS=-2.5V - 4.5 - nC - 1.2 - nC - 1.6 - nC - 13 20 ns - 35 53 ns - 32 48 ns - 10 20 ns - 740 - pF - 290 - pF - 190 - pF Test Conditions Min. Typ. Max. Units IS=3A, VGS =0V - -0.75 -1.3 V Qgd Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr td(off) Rise Time tf Ciss Fall Time Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD VDS=-4V ID=3.3A RG=1Ω VGS=-4.5V,RL=1.2Ω Forward On Voltage² VGS=0V VDS=-10V f=1.0MHz Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t