CT3400M

CT3400M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ ￭ ￭ ￭ Fast Switching Characteristic Low Gate Charger Small Footprint & Low Peofile Package RoHS Compliant & Halogen-Free BVDSS RDS(ON)typ 30V 22mΩ 5.8A ID »Description CT3400M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range Operating Junction Temperature Range TJ »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating 30 ±12 5.8 4.8 20 0.4 -55 to 150 150 Units V V A A A W Value 62.5 Unit ℃/W ℃ ℃ 1/4 CT3400M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=5.8A - 22 35 mΩ VGS=4.5V, ID=5A - 25 40 mΩ VGS=2.5V, ID=4A - 37 52 mΩ 0.7 0.95 1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=5A 8 - - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=±12V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge2 - 17.25 - nC - 2.1 - nC Qgd Gate-Drain ("Miller") Charge ID=5A VDS=10V VGS=6V - 2 - nC td(on) Turn-on Delay Time - 4.4 - ns tr td(off) Rise Time - 28.2 - ns - 16.2 - ns tf Ciss Fall Time - 26 - ns - 630 - pF Coss Output Capacitance - 55 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz - 71 - pF Rg Gate Resistance f=1.0MHz - 1.9 - Ω Min. Typ. Max. Units - - 1.2 V Gate-Source Charge VDS=15V ID=5A RG=3Ω VGS=10V Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² Test Conditions IS=1A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t