CT3401M

CT3401M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Drive Requirement ￭ Small Package Outline BVDSS ￭ Surface Mount Device ￭ RoHS Compliant & Halogen-Free RDS(ON)typ ID -30V 50mΩ 4.2A »Description CT3401M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Drain Current, VGS @ 10V1 ID@TA=70℃ Drain Current, VGS @ 10V1 IDM Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating -30 ±12 -4.2 -3.5 Units V V A A -16 0.4 -55 to 150 A W ℃ 150 ℃ Value 70 Unit ℃/W 1/4 CT3401M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA -30 - - V VGS=10V, ID=-4.2A - 50 70 mΩ VGS=-4.5V, ID=-4A - 60 80 mΩ VGS=-2.5V, ID=-4A - 82 120 mΩ -0.6 -0.9 -1.3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=-4A 7 - - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±12V, VDS=0V - - ±100 nA Qg Total Gate Charge - 7.4 - nC Qgs Gate-Source Charge - 1.3 - nC Qgd Gate-Drain ("Miller") Charge ID=4A VDS=-15V VGS=-4.5V - 2.6 - nC td(on) Turn-on Delay Time - 2.64 - ns tr Rise Time - 10 - ns td(off) Turn-off Delay Time - 52 - ns tf Ciss Fall Time - 16.2 - ns - 740 - pF Coss Output Capacitance - 51 - pF Crss Reverse Transfer Capacitance - 44 - pF Min. Typ. Max. Units - - -1.3 V Input Capacitance »Source-Drain Diode Symbol Parameter VSD VDS=-15V ID=3.6A RG=3.3Ω VGS=-10V Forward On Voltage² VGS=0V VDS=-15V f=1.0MHz Test Conditions IS=4A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t