CT3401M2
P-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
»Features
■ Simple Drive Requirement
■ Small Package Outline
BVDSS
■ Surface Mount Device
■ RoHS Compliant & Halogen-Free
RDS(ON)typ
ID
-30V
50mΩ
4.2A
»Description
CT3401M is from Coretong innovated design and silicon process technology to
achieve the lowest possible on- resistance and fast switching performance. It
provides the designer with an extreme efficient device for use in a wide range of
»Schematic & PIN Configuration
SOT-23
»Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃ Drain Current, VGS @ 10V1
ID@TA=70℃ Drain Current, VGS @ 10V1
IDM
Pulsed Drain Current2
PD@TA=25℃ Total Power Dissipation3
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
»Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
www.coretong.com
Rating
-30
±12
-4.2
-3.5
Units
V
V
A
A
-16
0.4
-55 to 150
A
W
℃
150
℃
Value
70
Unit
℃/W
1/4
CT3401M2
P-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
»Electrical Characteristics@Tj=25 oC(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
Min.
Typ.
Max.
Units
VGS=0V, ID=250uA
-30
-
-
V
VGS=10V, ID=-4.2A
-
50
70
mΩ
VGS=-4.5V, ID=-4A
-
60
80
mΩ
VGS=-2.5V, ID=-4A
-
82
120
mΩ
-0.6
-0.9
-1.3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=-4A
7
-
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=±12V, VDS=0V
-
-
±100
nA
Qg
Total Gate Charge
-
7.4
-
nC
Qgs
Gate-Source Charge
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
ID=4A
VDS=-15V
VGS=-4.5V
-
2.6
-
nC
td(on)
Turn-on Delay Time
-
2.64
-
ns
tr
Rise Time
-
10
-
ns
td(off)
Turn-off Delay Time
-
52
-
ns
tf
Ciss
Fall Time
-
16.2
-
ns
-
740
-
pF
Coss
Output Capacitance
-
51
-
pF
Crss
Reverse Transfer Capacitance
-
44
-
pF
Min.
Typ.
Max.
Units
-
-
-1.3
V
Input Capacitance
»Source-Drain Diode
Symbol Parameter
VSD
VDS=-15V
ID=3.6A
RG=3.3Ω
VGS=-10V
Forward On Voltage²
VGS=0V
VDS=-15V
f=1.0MHz
Test Conditions
IS=4A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t
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