CT3404M

CT3404M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Fast Switching Characteristic ￭ Low Gate Charger BVDSS ￭ Small Footprint & Low Peofile Package ￭ RoHS Compliant & Halogen-Free RDS(ON)typ ID 30V 24mΩ 5.8A »Description CT3404M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Drain Current, VGS @ 10V3 ID@TA=70℃ Drain Current, VGS @ 10V3 IDM Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating 30 ±20 5.8 Units V V A 4.8 A 30 A 0.35 W -55 to 150 ℃ 150 ℃ Value 357 Unit ℃/W 1/4 CT3404M N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=5.8A - 24 30 mΩ VGS=4.5V, ID=4.8A - 32 42 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance VDS=5V, ID=5.8A 5 - - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=±20V, VDS =0V - - ±100 nA td(on) Turn-on Delay Time - 6 - ns tr Rise Time - 3.1 - ns td(off) Turn-off Delay Time - 15.1 - ns tf Ciss Fall Time - 2.7 - ns - - 820 pF Coss Output Capacitance - 118 - pF Crss Reverse Transfer Capacitance - 85 - pF Test Conditions Min. Typ. Max. Units IS=1A, VGS=0V - - 1 V Input Capacitance »Source-Drain Diode Symbol Parameter VSD VDS=15V ID=1A RG=3Ω VGS=10V Forward On Voltage² VGS=0V VDS=25V f=1.0MHz Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t