CT3415M

CT3415M P-CHANNEL ENHANCEMENT MODE POWER MOSFET with ESD Diose »Features ￭ Capable of 2.5V Gate Driver ￭ Small Package Outline ￭ Surface Mount Device ￭ RoHS Compliant & Halogen-Free BVDSS -20V RDS(ON)typ 30mΩ ID 4A »Description CT3415M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range Operating Junction Temperature Range TJ »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating -20 ±8 -4 -3 -10 0.25 -55 to 150 150 Units V V A A A W Value 100 Unit ℃/W ℃ ℃ 1/3 CT3415M P-CHANNEL ENHANCEMENT MODE POWER MOSFET with ESD Diose »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. Max. Units VGS=0V, ID=250uA -20 - - V VGS=-4.5V, ID=-4A - 30 50 mΩ VGS=-2.5V, ID=-3A - 40 60 mΩ -0.3 -0.6 -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=-4A 8 - - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±8V, VDS=0V - - ±10 uA Qg Qgs Total Gate Charge - 17.2 - nC - 1.3 - nC Qgd Gate-Drain ("Miller") Charge ID=-4A VDS=-10V VGS=-4.5V - 4.5 - nC td(on) Turn-on Delay Time - 9.5 - ns tr td(off) Rise Time - 17 - ns - 94 - ns tf Ciss Fall Time - 35 - ns - 1450 - pF Coss Output Capacitance - 205 - pF Crss Reverse Transfer Capacitance - 160 - pF Min. Typ. Max. Units - - -1.2 V Gate-Source Charge VDS=-10V ID=-2A RG=3Ω VGS=-4.5V Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² VGS=0V VDS=-10V f=1.0MHz Test Conditions IS=4A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t