CT4N65F
N-Channel MOSFET
4A 650V N Channel MOSFET
Feactures
VDS =650V
ID = 4A @VGS =10V
RDS(ON) (Typ)=2.4Ω @VGS =10V
Applications
Power Supply
PFC
High Current, High Speed Switching
Des c rip tions
高压 High Current, High Speed
a
These N-channel MOSFET are produced using
advanced plane MOSFET Technology, which provides
Low on-state resistance,high switching performance
and excellent quality.
These devices are suitable device for SMPS,high
Speed switching and general purpose applications.
Rev_1.6_Mar 2020
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1/6
CT4N65F
N-Channel MOSFET
Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
650
V
Drain Current
ID(Tc=25℃)
4.0
A
Drain Current
ID(Tc=100℃)
2.5
A
Drain Current - Pulsed
IDM
16
A
Gate-Source Voltage
VGS
±30
V
Single Pulsed Avalanche Energy
EAS
240
mJ
Repetitive Avalanche Energy
EAR
10
mJ
Avalanche Current
IAR
4.0
A
Power Dissipation
PD(Tc=25℃)
33
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
℃
Junction to Ambient
RθJA
62.5
℃/W
Junction to Case
RθJC
3.7
℃/W
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Drain-Source Breakdown Voltage BVDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Input Capacitance
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Rev_1.6_Mar 2020
Test Conditions
VGS=0V
ID=250μA
VDS=650V
VGS=0V
VDS=480V
VGS=±30V
Typ
Max
650
Unit
V
1
μA
TC=125℃
100
μA
VDS=0V
±100
nA
4.0
V
2.7
Ω
VDS=VGS ID=250μA
VGS=10V
Min
ID=2.0A
VDS=25V
VGS=0V
f=1.0MHz
VDS= 520V, ID= 4.0A,
VGS= 10V
www.coretong.com
2.0
2.4
700
70
pF
20
102
18
nC
22
2/6
CT4N65F
N-Channel MOSFET
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Min
Typ
Max
Unit
48
VDD=325V
ID=4.0A
RG=25Ω
102
ns
205
134
IS
4.0
A
ISM
16
A
1.4
V
Drain-Source Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Rev_1.6_Mar 2020
Test Conditions
VGS = 0 V,
IS = 4.0A
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs
www.coretong.com
250
nS
1500
nC
3/6
CT4N65F
N-Channel MOSFET
Electrical Characteristic Curve
Rev_1.6_Mar 2020
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4/6
CT4N65F
N-Channel MOSFET
Marking Instructions
COT G
4N65
****
Note:
COT:
Company Logo
G:
Halogen Free
4N65:
Product Type.
****:
Lot No. Code, code change with Lot No.
Packaging SPEC.
BULK
Units
Package Type
TO-220F
Units/Bag
Bags/Inner Box
Units/Inner Box
Inner Boxes/Outer Box
Units/Outer Box
200
10
2,000
5
10,000
Bag
Dimension (unit:mm3)
Inner Box
Outer Box
Tube
Dimension (unit:mm3)
Inner Box
Outer Box
135×190
237×172×102
560×245×195
TUBE
Package Type
Units
Units/Tube
Tubes/Inner Box
Units/Inner Box
Inner Boxes/Outer Box
Units/Outer Box
50
20
1,000
5
5,000
TO-220F
Rev_1.6_Mar 2020
www.coretong.com
532×31.4×5.5
555×164×50
575×290×180
5/6
CT4N65F
N-Channel MOSFET
Package Dimensions
Rev_1.6_Mar 2020
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6/6
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