CT4N65FL

CT4N65FL N-Channel MOSFET 4A 650V N Channel MOSFET Feactures  VDS =650V  ID = 4A @VGS =10V  RDS(ON) (Typ)=2.4Ω @VGS =10V Applications  Power Supply  PFC  High Current, High Speed Switching Des c rip tions a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications. Rev_1.6_Mar 2021 www.coretong.com 1/6 CT4N65FL N-Channel MOSFET Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 650 V Drain Current ID(Tc=25℃) 4.0 A Drain Current ID(Tc=100℃) 2.5 A Drain Current - Pulsed IDM 16 A Gate-Source Voltage VGS ±30 V Single Pulsed Avalanche Energy EAS 240 mJ Repetitive Avalanche Energy EAR 10 mJ Avalanche Current IAR 4.0 A Power Dissipation PD(Tc=25℃) 33 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Junction to Ambient RθJA 62.5 ℃/W Junction to Case RθJC 3.7 ℃/W Test Conditions Min Electrical Characteristics(Ta=25℃) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance IDSS IGSS VGS(th) RDS(on) Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD Rev_1.6_Mar 2021 VGS=0V VDS=650V VDS=480V VGS=±30V VDS=VGS VGS=10V ID=250μA Max 650 Unit V VGS=0V 1 μA TC=125℃ 100 μA VDS=0V ±100 nA 4.0 V 2.7 Ω ID=250μA ID=2.0A VDS=25V VGS=0V f=1.0MHz VDS= 520V, ID= 4.0A, VGS= 10V www.coretong.com Typ 2.0 2.4 700 70 pF 20 102 18 nC 22 2/6 CT4N65FL N-Channel MOSFET Electrical Characteristics(Ta=25℃) Parameter Symbol Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Test Conditions Min Typ Max Unit 48 VDD=325V ID=4.0A RG=25Ω 102 ns 205 134 IS 4.0 A ISM 16 A 1.4 V Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS = 0 V, IS = 4.0A VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs 250 nS 1500 nC .. Rev_1.6_Mar 2021 www.coretong.com 3/6 CT4N65FL N-Channel MOSFET Electrical Characteristic Curve Rev_1.6_Mar 2021 www.coretong.com 4/6 CT4N65FL N-Channel MOSFET Marking Instructions COT G 4N65 **** Note: COT: Company Logo G: Halogen Free 4N65: Product Type. ****: Lot No. Code, code change with Lot No. Packaging SPEC. TUBE INFORMATION Package Type Units Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 50 20 1,000 5 5,000 TO-220FL Rev_1.6_Mar 2021 www.coretong.com Tube Dimension (unit：mm3) Inner Box Outer Box 532×33×7.0 555×164×50 575×290×180 5/6 CT4N65FL N-Channel MOSFET Package Dimensions Rev_1.6_Mar 2021 www.coretong.com 6/6