CT5N65F

CT5N65F N-Channel MOSFET 5A 650V N Channel MOSFET Feactures  VDS =650V  ID =5A @VGS =10V  RDS(ON) (Typ)= 2.0Ω @VGS =10V Applications  Power Supply  PFC  High Current, High Speed Switching Des c rip tions  高压 High Current, High Speed S a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications. Rev_1.8_Nov 2021 www.coretong.com 1/6 CT5N65F N-Channel MOSFET Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit VDSS 650 V Drain Current ID(Tc=25℃) 5.0 A Drain Current ID(Tc=100℃) 2.6 A IDM 20 A Gate-Source Voltage VGSS ±30 V Single Pulsed Avalanche Energy EAS 210 mJ Repetitive Avalanche Energy EAR 10 mJ Avalanche Current IAR 4.5 A Power Dissipation PD(Tc=25℃) 36 W TJ,TSTG -55 to 150 ℃ Junction to Ambient RθJA 62.5 ℃/W Junction to Case RθJC 3.47 ℃/W Drain-Source Voltage Drain Current - Pulsed Operating and Storage Temperature Range Electrical Characteristics(Ta=25℃) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Min Typ Max ID=250μA VDS=650V VGS=0V 1.0 μA VDS=480V TC=125℃ 10 μA VGS=±30V VDS=0V ±0.1 μA VGS(th) VDS=VGS ID=250μA 4.0 V RDS(on) VGS=10V ID=2.25A 2.5 Ω VDS=25V f=1.0MHz VGS=0V IGSS Ciss Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD VDS= 520V, VGS= 10V 650 Unit VGS=0V Output Capacitance Rev_1.8_Nov 2021 Test Conditions V 2.0 2.0 600 60 pF 10 ID= 5.0A, www.coretong.com 20 2.7 nC 6.8 2/6 CT5N65F N-Channel MOSFET Electrical Characteristics(Ta=25℃) Parameter Symbol Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Min Typ Max Unit 12 VDD=325V RG=25Ω ID=5.0A 45 ns 35 tf 49 IS 5 A ISM 20 A 1.4 V VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Rev_1.8_Nov 2021 Test Conditions VGS = 0 V, IS = 5.0A VGS = 0V, IS = 5.0A, dIF/dt = 100 A/μs www.coretong.com 320 nS 2200 nC 3/6 CT5N65F N-Channel MOSFET Electrical Characteristic Curve Rev_1.8_Nov 2021 www.coretong.com 4/6 CT5N65F N-Channel MOSFET Marking Instructions COT G 5N65 **** Note: COT: Company Logo G: Halogen Free 5N65: Product Type. ****: Lot No. Code, code change with Lot No. Packaging SPEC. BULK INFORMATION Units Package Type TO-220F Units/Bag Bags/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 200 10 2,000 5 10,000 Bag Dimension (unit：mm3) Inner Box Outer Box Tube Dimension (unit：mm3) Inner Box Outer Box 135×190 237×172×102 560×245×195 TUBE INFORMATION Package Type Units Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 50 20 1,000 5 5,000 TO-220F Rev_1.8_Nov 2021 www.coretong.com 532×31.4×5.5 555×164×50 575×290×180 5/6 CT5N65F N-Channel MOSFET Package Outline Dimensions Rev_1.8_Nov 2021 www.coretong.com 6/6