CT5N65FL
N-Channel MOSFET
5A 650V N Channel MOSFET
Feactures
VDS =650V
ID = 5A @VGS =10V
RDS(ON) (Typ)=2Ω @VGS =10V
Applications
Power Supply
PFC
High Current, High Speed Switching
Des c rip tions
a
These N-channel MOSFET are produced using
advanced plane MOSFET Technology, which provides
Low on-state resistance,high switching performance
and excellent quality.
These devices are suitable device for SMPS,high
Speed switching and general purpose applications.
Rev_1.6_Mar 2021
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CT5N65FL
N-Channel MOSFET
Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
650
V
Drain Current
ID(Tc=25℃)
5.0
A
Drain Current
ID(Tc=100℃)
2.6
A
Drain Current - Pulsed
IDM
20
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy
EAS
210
mJ
Repetitive Avalanche Energy
EAR
10
mJ
Avalanche Current
IAR
4.5
A
Power Dissipation
PD(Tc=25℃)
36
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
℃
Junction to Ambient
RθJA
62.5
℃/W
Junction to Case
RθJC
3.47
℃/W
Test Conditions
Min
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Drain-Source Breakdown Voltage BVDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Input Capacitance
IDSS
IGSS
VDS=650V
VDS=480V
VGS=±30V
ID=250μA
TC=125℃
10
μA
VDS=0V
±0.1
μA
4.0
V
2.5
Ω
RDS(on)
VGS=10V
ID=2.25A
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
VDS=25V
VGS=0V
f=1.0MHz
VDS= 520V, ID= 5.0A,
VGS= 10V
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V
μA
ID=250μA
Coss
650
Unit
1.0
VDS=VGS
Ciss
Max
VGS=0V
VGS(th)
Output Capacitance
Rev_1.6_Mar 2021
VGS=0V
Typ
2.0
2.0
600
60
pF
10
20
2.7
nC
6.8
2/6
CT5N65FL
N-Channel MOSFET
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Min
Typ
Max
Unit
12
VDD=325V
ID=5.0A
RG=25Ω
45
ns
35
49
IS
5
A
ISM
20
A
1.4
V
Drain-Source Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Rev_1.6_Mar 2021
Test Conditions
VGS = 0 V,
IS = 5.0A
VGS = 0V, IS = 5.0A,
dIF/dt = 100 A/μs
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320
nS
2200
nC
3/6
CT5N65FL
N-Channel MOSFET
Electrical Characteristic Curve
Rev_1.6_Mar 2021
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CT5N65FL
N-Channel MOSFET
Marking Instructions
COT G
5N65
****
Note:
COT:
Company Logo
G:
Halogen Free
5N65:
Product Type.
****:
Lot No. Code, code change with Lot No.
Packaging SPEC.
TUBE INFORMATION
Package Type
Units
Units/Tube
Tubes/Inner Box
Units/Inner Box
Inner Boxes/Outer Box
Units/Outer Box
50
20
1,000
5
5,000
TO-220FL
Rev_1.6_Mar 2021
www.coretong.com
Tube
Dimension (unit:mm3)
Inner Box
Outer Box
532×33×7.0 555×164×50 575×290×180
5/6
CT5N65FL
N-Channel MOSFET
Package Dimensions
Rev_1.6_Mar 2021
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