CT7N65FL

CT7N65FL N-Channel MOSFET 7A 650V N Channel MOSFET Feactures  VDS =650V  ID =7A @VGS =10V  RDS(ON) (Typ)=1.1Ω @VGS =10V Applications  Power Supply  PFC  High Current, High Speed Switching Des c rip tions  高压 High Current, High Speed Switching a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications. Rev_1.7_Mar 2020 www.coretong.com 1/6 CT7N65FL N-Channel MOSFET Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 650 V Drain Current ID(Tc=25℃) 7.0 A Drain Current ID(Tc=100℃) 4.4 A Drain Current - Pulsed IDM 29.5 A Gate-Source Voltage VGSS ±30 V Single Pulsed Avalanche Energy EAS 420 mJ Repetitive Avalanche Energy EAR 14.7 mJ Avalanche Current IAR 7.0 A Power Dissipation PD(Tc=25℃) 50 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Junction to Ambient RθJA 62.5 ℃/W Junction to Case RθJC 2.5 ℃/W Rev_1.7_Mar 2020 www.coretong.com 2/6 CT7N65FL N-Channel MOSFET Electrical Characteristics(Ta=25℃) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance IGSS Test Conditions VGS=0V ID=250μA VDS=520V TC=125℃ 100 μA VGS=±30V VDS=0V ±100 nA 4.0 V 1.3 Ω VGS=10V ID=3.5A Crss Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD V μA RDS(on) Reverse Transfer Capacitance 650 Unit 1.0 ID=250μA Coss Max VGS=0V VDS=VGS Output Capacitance Typ VDS=650V VGS(th) Ciss Min 2.0 1.1 VDS=25V VGS=0V f=1.0MHz 580 pF 50 pF 10 pF 30 VDS= 520V, ID= 7.0A, VGS= 10V 10 nC 21 Electrical Characteristics(Ta=25℃) Parameter Symbol Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS 7 A ISM 29.5 A 1.4 V Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Rev_1.7_Mar 2020 Test Conditions Min Typ Max Unit 52 VDD=325V ID=7.0A RG=25Ω 160 ns 400 190 VGS = 0 V, IS = 7.0A VGS = 0V, IS = 7.0A, dIF/dt = 100 A/μs www.coretong.com 330 nS 2400 nC 3/6 CT7N65FL N-Channel MOSFET Electrical Characteristic Curve Rev_1.7_Mar 2020 www.coretong.com 4/6 CT7N65FL N-Channel MOSFET Marking Instructions COT G 7N65 **** Note: COT: Company Logo G: Halogen Free 7N65: Product Type. ****: Lot No. Code, code change with Lot No. Packaging SPEC. TUBE INFORMATION Package Type Units Dimension (unit：mm3) Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 50 20 1,000 5 5,000 TO-220FL Rev_1.7_Mar 2020 www.coretong.com Tube 532×33×7.0 Inner Box 555×164×50 Outer Box 575×290×180 5/6 CT7N65FL N-Channel MOSFET Package Outline Dimensions Rev_1.7_Mar 2020 www.coretong.com 6/6