CT8205M3

CT8205M3 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ￭ Simple Drive Requirement ￭ Small Package Outline BVDSS ￭ Surface Mount Device ￭ RoHS Compliant & Halogen-Free RDS(ON)typ ID 20V 19mΩ 6A »Description CT8205M3 is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23-6L »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID-Continuous IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range www.coretong.com Rating 20 ±12 6 Units V V A 20 A 0.3 W -55 to 150 ℃ 150 ℃ 1/3 CT8205M3 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 20 - - V VGS=4.5V, ID=4.5A - 19 24 mΩ VGS=2.5V, ID=3A - 23 29 mΩ 0.4 0.65 1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=15V, ID=6A - 25 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±12V, VDS=0V - - ±100 nA Qg Qgs Total Gate Charge ID=6A VDS=10V VGS=4.5V - 7.49 8.5 nC - 2.48 2.96 nC - 2.04 2.65 nC - 17.5 29.8 ns - 28.5 38.2 ns - 41.2 59.6 ns - 10.4 26.3 ns - 492 - pF - 54 - pF - 7 - pF Test Conditions Min. Typ. Max. Units IS=2A, VGS =0V - - 1.2 V Qgd Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr td(off) Rise Time tf Ciss Fall Time Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD VDS=10V ID=1A RG=6Ω VGS=4.5V,RL=2.8Ω Forward On Voltage² VGS=0V VDS=10V f=1.0MHz Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t