MMBT5551W

Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES  Complementary to MMST5401  Small Surface Mount Package  Ideal for Medium Power Amplification and Switching MARKING:K4N SOT–323 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=120V, IE=0 50 nA Emitter cut-off current IEBO VEB=4V, IC=0 50 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=5V, IC=1mA 80 VCE=5V, IC=10mA 80 VCE=5V, IC=50mA 30 IC=50mA, IB=5mA 0.2 V IC=10mA, IB=1mA 0.15 V IC=50mA, IB=5mA 1 V IC=10mA, IB=1mA 1 V 300 MHz 6 pF VCE=10V,IC=10mA , f=100MHz 100 VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 1 of 2 Copyright © All right reserved: 300 Heyuan China Base Electronics Technology Co., Ltd. SOT-323 Package Outline Dimensions 2 of 2 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.