NSI8220W0-Q1SWVR

NSI822x-Q1 High Reliability Dual-Channel Digital Isolators Datasheet (EN) 1.0 Product Overview Safety Regulatory Approvals The NSi822x devices are high reliability dual-channel digital isolators. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. AEC-Q100 (Grade 1) option is provided for all devices.  UL recognition: up to 5000Vrms for 1 minute per UL1577 Key Features  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation  Motor control Device Information  Up to 5000Vrms Insulation voltage Part Number NSI822xNx-Q1SPR Package SOP8 Body Size 4.90mm × 3.90mm  Date rate: DC to 150Mbps NSI822xWx-Q1SWVR SOW8 5.85mm × 7.50mm  Power supply voltage: 2.5V to 5.5V NSI822xWx-Q1SWR SOW16 10.30mm × 7.50mm  All devices are AEC-Q100 qualified  High CMTI: 250kV/us  Chip level ESD: HBM: ±8kV  Robust EMC Reinforced Dual-Channel Digital Isolators for Functional Block Diagrams VDD1 1 8 VDD2 VDD1 1 8 VDD2 INA 2 7 OUTA OUTA 2 7 INA INB 3 6 OUTB INB 3 5 GND2 GND1 4 GND1 4 SOW8 wide body and SOW16 wide body  Low power consumption: 1.5mA/ch (1 Mbps)  RoHS-compliant packages: SOP8 narrow body SOW16 wide body Copyright © 2021, NOVOSENSE NSI8221 5 GND2 8 VDD2 VDD1 1 8 VDD2 INA 2 7 OUTA OUTA 2 7 INA INB 3 6 OUTB INB 3 5 GND2 GND1 4 GND1 4 GND1 4 6 INB NSi8222 5 GND2 NSI8220 VDD1 1 8 VDD2 INA 2 7 OUTA 6 OUTB OUTB 3 NSI8221 5 GND2 GND1 4 6 INB NSi8222 5 GND2 Figure 2. NSi822xW SOW8 Block Diagram GND1 1 16 GND2 NC 2 15 NC GND1 1 NC 2 16 GND2 15 NC GND1 1 16 GND2 NC 2 15 NC VDD1 3 14 VDD2 VDD1 3 14 VDD2 INA 4 13 OUTA OUTA 4 13 INA INB 5 12 OUTB INB 5 12 OUTB NC 6 11 NC NC 6 11 NC NC 6 11 NC GND1 7 10 NC GND1 7 10 NC GND1 7 10 NC NC 8 SOW8 wide body 7 OUTA 6 OUTB OUTB 3 VDD1 1  Low propagation delay: 10kV NSI8220 VDD1 1 NSI8220 9 GND2 NC 8 NSI8221 9 GND2 VDD 1 3 14 VDD2 INA 4 13 OUTA OUTB 5 NC 8 12 INB NSi8222 9 GND 2 Figure 3. NSi822xW SOW16 Block Diagram Page 1 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 INDEX 1. PIN CONFIGURATION AND FUNCTIONS ............................................................................................................................... 3 2. ABSOLUTE MAXIMUM RATINGS .......................................................................................................................................... 7 3. RECOMMENDED OPERATING CONDITIONS ......................................................................................................................... 7 4. THERMAL CHARACTERISTICS ............................................................................................................................................... 7 5. SPECIFICATIONS .................................................................................................................................................................. 8 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 5.7. 5.8. 5.9. ELECTRICAL CHARACTERISTICS ....................................................................................................................................... 8 SUPPLY CURRENT CHARACTERISTICS – 5V SUPPLY .......................................................................................................... 9 SUPPLY CURRENT CHARACTERISTICS –3.3V SUPPLY...................................................................................................... 10 SUPPLY CURRENT CHARACTERISTICS–2.5V SUPPLY ...................................................................................................... 11 SWITCHING CHARACTERISTICS - 5V SUPPLY .................................................................................................................. 12 SWITCHING CHARACTERISTICS - 3.3V SUPPLY ............................................................................................................... 12 SWITCHING CHARACTERISTICS - 2.5V SUPPLY ............................................................................................................... 13 TYPICAL PERFORMANCE CHARACTERISTICS .................................................................................................................. 14 PARAMETER MEASUREMENT INFORMATION ................................................................................................................... 15 6. HIGH VOLTAGE FEATURE DESCRIPTION ............................................................................................................................. 16 6.1. 6.2. 6.3. INSULATION AND SAFETY RELATED SPECIFICATIONS ...................................................................................................... 16 DIN VDE V 0884-11（VDE V 0884-11）:2017-01 INSULATION CHARACTERISTICS ................................................... 16 REGULATORY INFORMATION ........................................................................................................................................... 19 7. FUNCTION DESCRIPTION ................................................................................................................................................... 21 7.1. 7.2. OVERVIEW ...................................................................................................................................................................... 21 OOK MODULATION ........................................................................................................................................................ 22 8. APPLICATION NOTE ........................................................................................................................................................... 23 8.1. 8.2. 8.3. 8.4. TYPICAL APPLICATION CIRCUIT ..................................................................................................................................... 23 PCB LAYOUT.................................................................................................................................................................. 23 HIGH SPEED PERFORMANCE ........................................................................................................................................... 24 TYPICAL SUPPLY CURRENT EQUATIONS ......................................................................................................................... 24 9. PACKAGE INFORMATION ................................................................................................................................................... 25 10. ORDER INFORMATION .................................................................................................................................................... 30 11. DOCUMENTATION SUPPORT ........................................................................................................................................... 31 12. TAPE AND REELINFORMATION ........................................................................................................................................ 32 13. REVISION HISTORY .......................................................................................................................................................... 35 Copyright © 2021, NOVOSENSE Page 2 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 1. Pin Configuration and Functions VDD1 1 8 VDD2 VDD1 1 8 VDD2 INA 2 7 OUTA OUTA 2 7 INA INB 3 6 OUTB INB 3 5 GND2 GND1 4 GND1 4 NSi8220 Figure 1.1 NSi8220N Package 6 OUTB NSi8221 Figure 1.2 NSi8221N Package VDD 1 1 8 VDD2 INA 2 7 OUTA OUTB 3 GND 1 4 5 GND2 6 INB NSi8222 5 GND2 Figure 1.3 NSi8222N Package Table1.1 NSi8220N/ NSi8221N/ NSi8222N Pin Configuration and Description NSi8220N PIN NO. NSi8221N PIN NO. NSi8222N PIN NO. SYMBOL FUNCTION 1 1 1 VDD1 Power Supply for Isolator Side 1 2 7 2 INA Logic Input A 3 3 6 INB Logic Input B 4 4 4 GND1 Ground 1, the ground reference for Isolator Side 1 5 5 5 GND2 Ground 2, the ground reference for Isolator Side 2 6 6 3 OUTB Logic Output B 7 2 7 OUTA Logic Output A 8 8 8 VDD2 Power Supply for Isolator Side 2 Copyright © 2021, NOVOSENSE Page 3 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 VDD1 1 8 VDD2 VDD1 1 8 VDD2 INA 2 7 OUTA OUTA 2 7 INA INB 3 6 OUTB INB 3 5 GND2 GND1 4 GND1 4 NSi8220 Figure 1.4 NSi8220Wx SOW8 Package 6 OUTB NSi8221 Figure 1.5 NSi8221Wx SOW8 Package VDD 1 1 8 VDD2 INA 2 7 OUTA OUTB 3 GND 1 4 5 GND2 6 INB NSi8222 5 GND2 Figure 1.6 NSi8222Wx SOW8 Package Table1.2 NSi8220Wx/ NSi8221Wx/ NSi8222Wx SOW Pin Configuration and Description NSi8220W PIN NO. NSi8221W PIN NO. NSi8222W PIN NO. SYMBOL FUNCTION 1 1 1 VDD1 Power Supply for Isolator Side 1 2 7 2 INA Logic Input A 3 3 6 INB Logic Input B 4 4 4 GND1 Ground 1, the ground reference for Isolator Side 1 5 5 5 GND2 Ground 2, the ground reference for Isolator Side 2 6 6 3 OUTB Logic Output B 7 2 7 OUTA Logic Output A 8 8 8 VDD2 Power Supply for Isolator Side 2 Copyright © 2021, NOVOSENSE Page 4 NSi8220/NSi8221/NSi8222 GND1 1 16 GND2 NC 2 15 NC Datasheet (EN) 1.0 GND1 1 16 GND2 NC 2 15 NC VDD1 3 14 VDD2 VDD1 3 14 VDD2 INA 4 13 OUTA OUTA 4 13 INA INB 5 12 OUTB INB 5 12 OUTB NC 6 11 NC NC 6 11 NC GND1 7 10 NC GND1 7 10 NC NC 8 9 GND2 NSi8220 NC 8 Figure 1.7 NSi8220W Package NSi8221 9 GND2 Figure 1.8 NSi8221W Package GND1 1 16 GND2 NC 2 15 NC VDD1 3 14 VDD2 INA 4 13 OUTA OUTB 5 12 INB NC 6 11 NC GND1 7 10 NC NSi822 2 NC 8 9 GND2 Figure 1.9 NSi8222W Package Table 1.2 NSi8220W/ NSi8221W/ NSi8222W Pin Configuration and Description NSi8220W PIN NO. NSi8221W PIN NO. NSi8222W PIN NO. SYMBOL FUNCTION 1 1 1 GND1 Ground 1, the ground reference for Isolator Side 1 2 2 2 NC No Connection. 3 3 3 VDD1 Power Supply for Isolator Side 1 4 13 4 INA Logic Input A 5 5 12 INB Logic Input B 6 6 6 NC No Connection. 7 7 7 GND1 Ground 1, the ground reference for Isolator Side 1 Copyright © 2021, NOVOSENSE Page 5 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 NSi8220W PIN NO. NSi8221W PIN NO. NSi8222W PIN NO. SYMBOL FUNCTION 8 8 8 NC No Connection. 9 9 9 GND2 Ground 2, the ground reference for Isolator Side 2 10 10 10 NC No Connection. 11 11 11 NC No Connection. 12 12 5 OUTB Logic Output A 13 4 13 OUTA Logic Output B 14 14 14 VDD2 Power Supply for Isolator Side 2 15 15 15 NC No Connection. 16 16 16 GND2 Ground 2, the ground reference for Isolator Side 2 Copyright © 2021, NOVOSENSE Page 6 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 2. Absolute Maximum Ratings Parameters Symbol Min VDD1, VDD2 -0.5 6.5 V VINA, VINB -0.4 VDD+0.41 V The maximum voltage must not exceed 6.5V Maximum Output Voltage VOUTA, VOUTB -0.4 VDD+0.41 V The maximum voltage must not exceed 6.5V Maximum Input/Output Pulse Voltage VINA, VINB, VOUTA, VOUTB -0.8 VDD+0.8 V Pulse width should be less than 100ns, and the duty cycle should be less than 10% Io -15 15 mA Operating Temperature Topr -40 125 ℃ Storage Temperature Tstg -40 150 ℃ HBM ±8000 V CDM ±2000 V Power Supply Voltage Maximum Input Voltage Output current Typ Max Unit Comments Electrostatic discharge 3. Recommended Operating Conditions Parameters Symbol min Power Supply Voltage VDD1, VDD2 Operating Temperature typ max unit 2.5 5.5 V Topr -40 125 ℃ High Level Input Voltage VIH 2 Low Level Input Voltage VIL 0.8 V Data rate DR 150 Mbps V 4. Thermal Characteristics Parameters IC Junction-to-Air Thermal Resistance Junction-to-case (top) thermal resistance Junction-to-board thermal resistance Copyright © 2021, NOVOSENSE Symbol SOW16 SOW8 Unit θJA 86.5 84.3 ℃/W θJC（top） 49.6 36.3 ℃/W θJB 49.7 47.0 ℃/W Page 7 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5. SPECIFICATIONS 5.1. Electrical Characteristics (VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Power on Reset VDDPOR 2.2 V POR threshold as during powerup VDD HYS 0.1 V POR threshold Hysteresis VIT 1.6 V Input Threshold at rising edge VIT_HYS 0.4 V Input Threshold Hysteresis Input Threshold Min Typ Max High Level Input Voltage VIH Low Level Input Voltage VIL High Level Output Voltage VOH Low Level Output Voltage VOL Output Impedance Rout 50 Input Pull high or low Current Ipull 8 Start Up Time after POR trbs 10 usec Common Mode Transient Immunity CMTI ±250 kV/us Copyright © 2021, NOVOSENSE 2 Unit V 0.8 VDD0.4 0.4 ±200 Comments V V IOH ≤ 4mA V IOL ≤ 4mA ohm 15 uA See Figure 5.8 Page 8 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.2. Supply Current Characteristics – 5V Supply (VDD1=5V± 10%, VDD2=5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 0.59 0.89 mA IDD2(Q0) 1.29 1.94 mA IDD1(Q1) 2.80 4.20 mA All Input at supply for NSi8220x0 IDD2(Q1) 1.32 1.98 mA Or All Input 0V for NSi8220x1 IDD1(1M) 1.70 2.55 mA All Input with 1Mbps, IDD2(1M) 1.39 2.09 mA CL=15pF IDD1(10M) 1.78 2.67 mA All Input with 10Mbps, IDD2(10M) 2.13 3.20 mA CL=15pF IDD1(100M) 2.49 4.23 mA All Input with 100Mbps, IDD2(100M) 9.22 15.66 mA CL=15pF IDD1(Q0) 0.94 1.41 mA IDD2(Q0) 0.94 1.41 mA All Input 0V for NSi822xx0 Or All Input at supply for NSi822xx1 IDD1(Q1) 2.06 3.09 mA All Input at supply for NSi822xx0 IDD2(Q1) 2.06 3.09 mA Or All Input 0V for NSi822xx1 IDD1(1M) 1.55 2.32 mA All Input with 1Mbps, IDD2(1M) 1.55 2.32 mA CL=15pF IDD1(10M) 1.96 2.93 mA All Input with 10Mbps, IDD2(10M) 1.96 2.93 mA CL=15pF IDD1(100M) 5.86 10.05 mA All Input with 100Mbps, IDD2(100M) 5.86 10.05 mA CL = 15pF NSi8220 All Input 0V for NSi8220x0 Or All Input at supply for NSi8220x1 Supply current NSi8221/ NSi8222 Copyright © 2021, NOVOSENSE Page 9 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.3. Supply Current Characteristics –3.3V Supply (VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 0.56 0.83 mA IDD2(Q0) 1.24 1.86 mA All Input 0V for NSi8220x0 Or All Input at supply for NSi8220x1 IDD1(Q1) 2.76 4.13 mA All Input at supply for NSi8220x0 IDD2(Q1) 1.27 1.91 mA Or All Input 0V for NSi8220x1 IDD1(1M) 1.66 2.49 mA All Input with 1Mbps, IDD2(1M) 1.31 1.97 mA CL = 15pF IDD1(10M) 1.71 2.57 mA All Input with 10Mbps, IDD2(10M) 1.80 2.70 mA CL = 15pF IDD1(100M) 2.20 3.65 mA All Input with 100Mbps, IDD2(100M) 6.50 10.77 mA CL = 15pF IDD1(Q0) 0.90 1.35 mA IDD2(Q0) 0.90 1.35 mA All Input 0V for NSi822xx0 Or All Input at supply for NSi822xx1 IDD1(Q1) 2.01 3.02 mA All Input at supply for NSi822xx0 IDD2(Q1) 2.01 3.02 mA Or All Input 0V for NSi822xx1 IDD1(1M) 1.49 2.23 mA All Input with 1Mbps, IDD2(1M) 1.49 2.23 mA CL = 15pF IDD1(10M) 1.76 2.63 mA All Input with 10Mbps, IDD2(10M) 1.76 2.63 mA CL = 15pF IDD1(100M) 4.35 7.27 mA All Input with 100Mbps, IDD2(100M) 4.35 7.27 mA CL = 15pF NSi8220 Supply current NSi8221/ NSi8222 Copyright © 2021, NOVOSENSE Page 10 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.4. Supply Current Characteristics–2.5V Supply (VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 0.54 0.81 mA IDD2(Q0) 1.22 1.83 mA All Input 0V for NSi8220x0 Or All Input at supply for NSi8220x1 IDD1(Q1) 2.73 4.10 mA All Input at supply for NSi8220x0 IDD2(Q1) 1.24 1.86 mA Or All Input 0V for NSi8220x1 IDD1(1M) 1.64 2.46 mA All Input with 1Mbps, IDD2(1M) 1.27 1.91 mA CL = 15pF IDD1(10M) 1.67 2.51 mA All Input with 10Mbps, IDD2(10M) 1.65 2.48 mA CL = 15pF IDD1(100M) 1.98 3.23 mA All Input with 100Mbps, IDD2(100M) 5.22 8.53 mA CL = 15pF IDD1(Q0) 0.88 1.32 mA IDD2(Q0) 0.88 1.32 mA All Input 0V for NSi822xx0 Or All Input at supply for NSi822xx1 IDD1(Q1) 1.99 2.98 mA All Input at supply for NSi822xx0 IDD2(Q1) 1.99 2.98 mA Or All Input 0V for NSi822xx1 IDD1(1M) 1.46 2.18 mA All Input with 1Mbps, IDD2(1M) 1.46 2.18 mA CL = 15pF IDD1(10M) 1.66 2.49 mA All Input with 10Mbps, IDD2(10M) 1.66 2.49 mA CL = 15pF IDD1(100M) 3.60 5.93 mA All Input with 100Mbps, IDD2(100M) 3.60 5.93 mA CL = 15pF NSi8220 Supply current NSi8221/ NSi8222 Copyright © 2021, NOVOSENSE Page 11 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.5. Switching Characteristics - 5V Supply (VDD1=5V± 10%, VDD2=5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH 2.5 t PHL 2.5 Max Unit 150 Mbps 5.0 ns 6.54 15 ns See Figure 5.7 , CL = 15pF 8.30 15 ns See Figure 5.7 , CL = 15pF PWD 5.0 ns See Figure 5.7 , CL = 15pF Rising Time tr 5.0 ns See Figure 5.7 , CL = 15pF Falling Time tf 5.0 ns See Figure 5.7 , CL = 15pF Pulse Width Distortion Typ Comments |t PHL – t PLH | Peak Eye Diagram Jitter tJIT(PK) 350 ps Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns 5.6. Switching Characteristics - 3.3V Supply (VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH 2.5 t PHL 2.5 Max Unit 150 Mbps 5.0 ns 8.0 15 ns See Figure 5.7 , CL = 15pF 8.7 15 ns See Figure 5.7 , CL = 15pF PWD 5.0 ns See Figure 5.7 , CL = 15pF Rising Time tr 5.0 ns See Figure 5.7 , CL = 15pF Falling Time tf 5.0 ns See Figure 5.7 , CL = 15pF Pulse Width Distortion Typ Comments |t PHL – t PLH | Copyright © 2021, NOVOSENSE Page 12 NSi8220/NSi8221/NSi8222 Min Datasheet (EN) 1.0 Parameters Symbol Typ Max Peak Eye Diagram Jitter tJIT(PK) Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns 350 Unit Comments ps 5.7. Switching Characteristics - 2.5V Supply (VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH 2.5 t PHL 2.5 Max Unit 150 Mbps 5.0 ns 9.0 15 ns See Figure 5.7 , CL = 15pF 9.3 15 ns See Figure 5.7 , CL = 15pF PWD 5.0 ns See Figure 5.7 , CL = 15pF Rising Time tr 5.0 ns See Figure 5.7, CL = 15pF Falling Time tf 5.0 ns See Figure 5.7, CL = 15pF Pulse Width Distortion Typ Comments |t PHL – t PLH | Peak Eye Diagram Jitter tJIT(PK) Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns Copyright © 2021, NOVOSENSE 350 ps Page 13 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.8. Typical Performance Characteristics 15 Supply Current(mA) Supply Current(mA) 4.00 3.00 2.00 2.5 3.3 5 1.00 0.00 0 50 100 150 10 2.5 3.3 5 5 0 200 0 50 Data Rate (Mbps） Supply Current(mA) Supply Current(mA) 200 Figure 5.2 NSi8220 VDD2 Supply Current vs Data Rate 25 20 15 2.5 3.3 5 5 150 Data Rate (Mbps） Figure 5.1 NSi8220 VDD1 Supply Current vs Data Rate 10 100 25 20 15 10 2.5 3.3 5 5 0 0 0 50 100 150 0 200 50 100 150 200 Data Rate (Mbps） Data Rate (Mbps） Figure 5.3 NSi8221/ NSi8222 VDD1 Supply Current vs Data Rate Figure 5.4 NSi8221/ NSi8222 VDD2 Supply Current vs Data Rate 10 Prooagation Delay(ns) Prooagation Delay(ns) 12 10 8 6 4 2.5 3.3 5 2 0 -40 10 60 110 6 4 2.5 3.3 5 2 0 160 Temperature(°C) Figure 5.5 Rising Edge Propagation Delay Vs Temp Copyright © 2021, NOVOSENSE 8 -40 10 60 110 160 Temperature(°C) Figure 5.6 Falling Edge Propagation Delay Vs Temp Page 14 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 5.9. Parameter Measurement Information Input Generator VI VO 50Ω CL Figure 5.7 Switching Characteristics Test Circuit and Waveform VDD1 VDD2 IN OUT VO Battery DC CL GND2 GND1 VCM Figure 5.8 Common-Mode Transient Immunity Test Circuit Copyright © 2021, NOVOSENSE Page 15 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 6. High Voltage Feature Description 6.1. Insulation and Safety Related Specifications Value Parameters Symbol Unit SOP8 SOW8 Comments SOW16 Minimum External Air Gap (Clearance) L(I01) 4.0 8.0 8.0 mm Shortest terminal-to-terminal distance through air Minimum External Tracking (Creepage) L(I02) 4.0 8.0 8.0 mm Shortest terminal-to-terminal distance across the package surface um Distance through insulation V DIN EN 60112 (VDE 0303-11); IEC 60112 Minimum internal gap DTI Tracking Resistance (Comparative Tracking Index) CTI Material Group 32 >400 >600 >600 Ⅱ Ⅰ Ⅰ 6.2. DIN VDE V 0884-11（VDE V 0884-11）:2017-01 Insulation Characteristics Description Test Condition Symbol Value Unit SOP8 SOW8 SOW16 For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 300Vrms Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 600Vrms Ⅰto Ⅱ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 1000Vrms Ⅰ Ⅰto Ⅲ Ⅰto Ⅲ 10/105/21 10/105/21 10/105/21 2 2 2 VIORM 565 2121 2121 Vpeak VIOWM 400 1500 1500 VRMS 565 2121 2121 VDC Installation Classification per DIN VDE 0110 Climatic Classification Pollution Degree per DIN VDE 0110, Table 1 Maximum repetitive isolation voltage Maximum Working Isolation Voltage AC voltage DC voltage Copyright © 2021, NOVOSENSE Page 16 NSi8220/NSi8221/NSi8222 Description Input to Output Test Voltage, Method B1 Test Condition VIORM × 1.5 = Vpd(m), Datasheet (EN) 1.0 Symbol V pd (m) Value Unit 847 / / / 3977 3977 678 / / / 3394 3394 Vpeak 100% production test, tini = tm = 1 sec, qpd < 5 pC VIORM × 1.875 = Vpd(m), 100% production test, tini = tm = 1 sec, qpd < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.2=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC V pd (m) VIORM × 1.6=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC After Input and /or Safety Test Subgroup 2 and Subgroup 3 Vpeak V IORM × 1.2= V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC V pd (m) 678 2545 2545 Vpeak t = 60 sec VIOTM 5300 8000 8000 Vpeak Maximum withstanding isolation voltage VTEST= VISO, t = 60 s (qualification); VTEST= 1.2 × VISO, t = 1 s (100%production) VISO 3750 5000 5000 VRMS Maximum Surge Isolation Voltage Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.3 VIOSM 5384 Maximum transient isolation voltage Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.6 Vpeak 6250 6250 Vpeak >109 >109 >109 Ω >1011 >1011 >1011 Ω CIO 0.6 0.6 0.6 pF Input capacitance CI 2 2 2 pF Total Power Dissipation at 25℃ Ps 908 1483 1445 Isolation resistance VIO =500V at Tamb=TS RIO VIO =500V at 100℃≤Tamb≤125℃ Isolation capacitance Copyright © 2021, NOVOSENSE f = 1MHz mW Page 17 NSi8220/NSi8221/NSi8222 Description Test Condition Datasheet (EN) 1.0 Symbol θJA = 137.7 ℃/W, V I = 5.5 Value Unit 165 mA V, T J = 150 ℃, T A = 25 ℃ Safety input, output, or supply current θJA = 84.3 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 269.6 Is θJA = 86.5 ℃/W, V I = 5.5 V, 262.7 mA 150 ℃ T J = 150 ℃, T A = 25 ℃ Case Temperature Ts 150 150 Figure 6.1 NSi822xN-Q1SPR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Figure 6.2 NSi822xW-Q1SWVR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2021, NOVOSENSE Page 18 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 6.3 NSi822xW-Q1SWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 6.3. Regulatory Information The NSi822xN-Q1SPR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program VDE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411:2017-01 CQC Certified by CQC11471543-2012 GB4943.1-2011 Single Protection, 3750Vrms Isolation voltage Single Protection, 3750Vrms Isolation voltage Basic Insulation 565Vpeak, VIOSM=5384Vpeak Basic insulation at 400Vrms (565Vpeak) File (E500602) File (E500602) File (pending) File (CQC20001264940) VDE CQC The NSi822xW-Q1SWVR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 5000Vrms Isolation voltage File (E500602) Copyright © 2021, NOVOSENSE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (E500602) File (40052820) File (CQC20001264938) GB4943.1-2011 Page 19 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 The NSi822xW-Q1SWR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 5000Vrms Isolation voltage File (E500602) Copyright © 2021, NOVOSENSE VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (E500602) File (40052820) File (CQC20001264939) GB4943.1-2011 Page 20 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 7. Function Description 7.1. Overview The NSi822x is a Dual-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. The NSi822x devices are high reliability dual-channel digital isolator with AEC-Q100 qualified. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. The NSi822x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 4.1, which helps for diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A within 60us after powering up. Table 7.1 Output status vs. power status Input VDD1 status VDD2 status Output Comment H1 Ready Ready H Normal operation. L2 Ready Ready L X3 Unready Ready L(NSi822xx0) H(NSi822xx1) X Ready Unready X The output follows the same status with the input within 60us after input side VDD1 is powered on. The output follows the same status with the input within 60us after output side VDD2 is powered on. Note: H=Logic high; L=Logic low; X=Logic low or logic high VDD1 is input side power;VDD2 is out side power. Copyright © 2021, NOVOSENSE Page 21 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 7.2. OOK Modulation NSi822x is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Isolation barrier VIN PWM TX signal conditioning RX signal conditioning envelope detection VOUT EN OSC Figure 7.1 Single Channel Function Block Diagram TX IN Signal through isolation barrier RX OUT Figure 7.2 OOK Modulation Copyright © 2021, NOVOSENSE Page 22 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 8. Application Note 8.1. Typical Application Circuit Isolated Power VIN=5V/3.3V VOUT=5V/3.3V VDD1 100nF MCU VDD2 1 OUTA 2 INB 3 4 8 INA 7 OUTB 6 GND2 NSI8221 5 100nF VCC RO A CAN B DI Figure 8.1 Typical SCH for ISO CAN Interface 8.2. PCB Layout The NSi822x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 8.2 to Figure 8.5 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50– 300 Ω) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure8.2 Recommended PCB Layout — Top Layer Figure8.4 Recommended PCB Layout — Top Layer Copyright © 2021, NOVOSENSE Figure8.3 Recommended PCB Layout — Bottom Layer Figure8.5 Recommended PCB Layout — Bottom Layer Page 23 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 8.3. High Speed Performance Figure 8.6 shows the eye diagram of NSi822x at 200Mbps data rate output. The result shows a typical measurement on the NSi822x with 350ps p-p jitter. Figure8.6 NSi822x Eye Diagram 8.4. Typical Supply Current Equations The typical supply current of NSi822x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8220: IDD1 = 0.19 *a1+1.45*b1+0.82*c1. IDD2 = 1.36+ VDD1*f* CL *c1*10-9 When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1. NSi8221/ NSi8222: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. Copyright © 2021, NOVOSENSE Page 24 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 9. Package Information Figure 9.1 SOP8 Package Shape and Dimension in millimeters Copyright © 2021, NOVOSENSE Page 25 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 9.2 SOP8 Package Board Layout Example Copyright © 2021, NOVOSENSE Page 26 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 9.3 SOW8 Package Shape and Dimension in millimeters Copyright © 2021, NOVOSENSE Page 27 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 9.4 SOW8 Package Board Layout Example Copyright © 2021, NOVOSENSE Page 28 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 9.5 SOW16 Package Shape and Dimension in millimeters Figure 9.6 SOW16 Package Board Layout Example Copyright © 2021, NOVOSENSE Page 29 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 10. Order Information Part Number Isolation Rating (kV) Numbe r of side 1 inputs Numbe r of side 2 inputs Default Output State Temperature MSL Package Type Package Drawing SPQ 0 Max Data Rate (Mbps) 150 NSi8220N0Q1SPR NSi8220N1Q1SPR NSi8221N0Q1SPR NSi8221N1Q1SPR NSi8222N0Q1SPR NSi8222N1Q1SPR NSi8220W0Q1SWR NSi8220W1Q1SWR NSi8221W0Q1SWR NSi8221W1Q1SWR NSi8222W0Q1SWR NSi8222W1Q1SWR NSi8220W0Q1SWVR NSi8220W1Q1SWVR NSi8221W0Q1SWVR NSi8221W1Q1SWVR NSi8222W0Q1SWVR NSi8222W1Q1SWVR 3.75 2 Low -55 to 125℃ 1 SOP8 2500 2 0 150 High -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -55 to 125℃ 1 SOP8 2500 5 2 0 150 Low -40 to 125℃ 2 SOW16 1000 5 2 0 150 High -40 to 125℃ 2 SOW16 1000 5 1 1 150 Low -40 to 125℃ 2 SOW16 1000 5 1 1 150 High -40 to 125℃ 2 SOW16 1000 5 1 1 150 Low -40 to 125℃ 2 SOW16 1000 5 1 1 150 High -40 to 125℃ 2 SOW16 1000 5 2 0 150 Low -40 to 125℃ 3 SOW8 1000 5 2 0 150 High -40 to 125℃ 3 SOW8 1000 5 1 1 150 Low -40 to 125℃ 3 SOW8 1000 5 1 1 150 High -40 to 125℃ 3 SOW8 1000 5 1 1 150 Low -40 to 125℃ 3 SOW8 1000 5 1 1 150 High -40 to 125℃ 3 SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) 3.75 SOW8 1000 NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 ℃ according to the JEDEC industry standard classifications and peak solder temperatures. All devices are AEC-Q100 qualified. Copyright © 2021, NOVOSENSE Page 30 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Part Number Rule: NSi(82)(2)(1)(W)(1)-DSWR Package Type: SP=SOP8(150mil) SW=SOW16(300mil) SWV=SOW8(300mil) Series Number 4=4Channels Reverse Channel Amount: N=N Channels N=0,1,2 D = Industrial Q1 = Auto Package Type: N= NB W= WB Fail-Safe Output State: 0 = Logic Low 1 = Logic High 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSI822x Click here Click here Click here Click here Copyright © 2021, NOVOSENSE Page 31 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 12. TAPE AND REELINFORMATION Figure 12.1 Tape and Reel Information of SOP8 Copyright © 2021, NOVOSENSE Page 32 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 12.2 Tape and Reel Information of SOW8 Copyright © 2021, NOVOSENSE Page 33 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 Figure 12.3 Tape and Reel Information of SOW16 Copyright © 2021, NOVOSENSE Page 34 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.0 13. Revision History Revision 1.0 Description Initial version Copyright © 2021, NOVOSENSE Date 2021/7/15 Page 35