SI2308

HXY SI2308 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The SI2308 uses advanced trench technology to provide excellent RDS(ON), This device is suitable D for use as a load switch or in PWM applications. S G General Features SOT-23 VDS = 60V,I D = 2.5A RDS(ON) < 160m Ω @ VGS= 10V PIN2 D Application ! " Battery protection PIN1 G ! ! " Load switch " " ! PIN3 S Uninterruptible power supply N-Channel MOSFET Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) SI2308 SOT-23 MS08 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Pulsed (Note 1) 10 A PD Maximum Power Dissipation 1.25 W -55 To 150 ℃ 62.5 ℃/W TJ,TSTG RθJA Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2308 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current V 2 V VDS=0V, VGS=±12V ±100 nA VDS=44V, VGS=0 1 VDS=44V, VGS=0 5 TJ=85℃ ID(ON) RDS(ON) Gfs On=State Drain Current Drain-Source On-Resistance Forward Transconductance VDS≧5V, VGS=4.5V 10 uA A VGS =10V,I D=1.8A 140 160 VGS=4.5V, ID=1.5A 154 200 mΩ VDS=5V, ID=2.1A 10 IS=1.0A, VGS=0V 0.8 1.0 3.9 S Source-Drain Diode VSD Diode Forward Voltage V Dynamic Parameters Qg Total Gate Charge VDS=27V 2.1 Qgs Gate-Source Charge VGS=4.5V 0.6 Qgd Gate-Drain Charge ID=2.1A 0.8 Ciss Input Capacitance VDS=25V 295 Coss Output Capacitance VGS=0V 40 Crss Reverse Transfer Capacitance f=1MHz 15 VDS=27V 3.6 RL=10Ω 3.5 ID=1A 32 Td(on) Tr Turn-On Time Td(off) Tf Turn-Off Time VGEN=4.5V RG=6Ω nC pF nS 3 Note: 1. Pulse test: pulse width