ESD5471Z-2/TR

ESD5471Z ESD5471Z 1-Line, Bi-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5471Z is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN0603-2L (Bottom View) The ESD5471Z may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 6A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5471Z is available in DFN0603-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±5V Max  Transient protection for each line according to Pin1 IEC61000-4-2 (ESD): ±30kV (contact and air discharge) *C Pin2 IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 6A (8/20μs)  Capacitance: CJ = 9pF typ.  Low leakage current  Low clamping voltage: VCL = 12V typ. @ IPP = 16A (TLP)  Solid-state silicon technology C = Device code * = Month code Marking (Top View) Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. Order information Device Package Shipping ESD5471Z-2/TR DFN0603-2L 10000/Tape&Reel 1 Revision 1.4, 2018/04/23 ESD5471Z Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 70 W Peak pulse current (tp = 8/20μs) IPP 6 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.4, 2018/04/23 ESD5471Z o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.1 V IHOLD = 50mA 5.1 V Reverse breakdown voltage Reverse holding voltage VHOLD Clamping voltage 1) VCL IPP = 16A, tp = 100ns 12 V Clamping voltage 2) VCL VESD = 8kV 12 V Clamping voltage 3) VCL Dynamic resistance 1) Junction capacitance IPP = 1A, tp = 8/20μs 8 V IPP = 6A, tp = 8/20μs 12 V RDYN Ω 0.28 VR = 0V, f = 1MHz 9 12 pF VR = 5V, f = 1MHz 6 8 pF CJ Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.4, 2018/04/23 ESD5471Z o 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 tr = 0.7~1ns Time (s) T1 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 10 Pulse waveform: tp = 8/20s 10 Pin1 to Pin2 9 Pin2 to Pin1 8 7 6 0 1 2 3 4 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 11 t 60ns 30ns 20 T 5 6 f = 1MHz VAC = 50mV 9 8 7 6 5 -5 7 -4 -3 IPP - Peak pulse current (A) -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 100 % of Rated power Peak pulse power (W) 100 10 1 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.4, 2018/04/23 ESD5471Z o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 16 TLP current (A) 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.4, 2018/04/23 ESD5471Z PACKAGE OUTLINE DIMENSIONS DFN0603-2L    b CATHODE MARKING E L e D TOP VIEW BOTTOM VIEW A A3 A1 SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.23 0.30 0.34 A1 0.00 0.03 0.05 A3 0.10 Ref. D 0.55 0.60 0.67 E 0.25 0.30 0.37 b 0.10 0.15 0.20 L 0.20 0.24 0.30 e 0.40 Ref Recommended PCB Layout (Unit: mm) 0.22 0.32 0.20 Notes: 0.42 0.64 Will Semiconductor Ltd. This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 6 Revision 1.4, 2018/04/23 ESD5471Z TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 1.4, 2018/04/23