KJ3400S

KJ3400S N-Channel Enhancement Mode MOSFET 1. Product Information 1.1 Features  Surface-mounted package 1.2  Advanced trench cell design Applications  Portable appliances  High speed switch 1.3  Battery management  Low power DC to DC Converter Quick reference  RDS(ON) ≦ 26 mΩ @ VGS = 10 V  RDS(ON) ≦ 30 mΩ @ VGS = 4.5 V  RDS(ON) ≦ 45 mΩ @ VGS = 2.5 V  BV ≧ 30 V  Ptot ≦ 0.72 W  ID ≦ 5 A 2. Pin Description Pin Description 1 Gate (G) 2 3 Source (S) Drain (D) Simplified Outline Symbol D 3 G 1 2 Top View SOT23 www.kjx-tech.cn 1 S Version 0.3 KJ3400S 3. Limiting Values Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TA = 25℃ 30 - V VGS Gate-Source Voltage TA = 25℃ - ±12 V ID* Drain Current TA = 25℃, VGS = 10 V - 5.0 A Pulsed Drain Current TA = 25℃, VGS = 10 V - 20 A Ptot Total Power Dissipation TA = 25℃ - 0.72 W Tstg Storage Temperature -55 150 ℃ TJ Junction Temperature - 150 ℃ IS Diode Forward Current - 5.0 A - 140 ℃/W IDM*,** RθJA* TA = 25 ℃ Thermal Resistance-Junction to Ambient Notes： * Surface Mounted on 1 in2 pad area, t  10 sec ** Pulse width  300 s, duty cycle  2% 4. Marking Information Product Name Marking KJ3400S 3400 5. Ordering Code Product Name Package KJ3400S SOT23 Note: Reel Size Tape width Quantity Note 3000 KUAIJIEXIN defines “Green” as lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900 ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500 ppm by weight; Follow IEC 61249-2-21 and IPC/JEDEC J-STD-020C) www.kjx-tech.cn 2 Version 0.3 KJ3400S 6. Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, IDS = 250 μA 30 - - V VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 0.5 0.9 1.5 V - - 1 μA IDSS Drain Leakage Current - - 30 μA VGS = ±12 V, VDS = 0 V - - ±100 nA VGS = 10 V, IDS = 5 A - 21 26 VGS = 4.5 V, IDS = 4.5 A - 25 30 VGS = 2.5 V, IDS = 4.0 A - 35 45 - 630 - - 76 - VDS = 24 V, VGS = 0 V TJ = 85℃ IGSS Gate Leakage Current RDS(ON)a On-State Resistance Dynamic Characteristicsb Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 55 - td(on) Turn-on Delay Time - 3 - tr Turn-on Rise Time - 25 - td(off) Turn-off Delay Time - 25 - - 4 - - 6 - - 1.3 - - 1.8 - - 0.72 1.12 tf VGS = 0 V, VDS = 15 V Frequency = 1 MHz VDS = 15 V, VGEN = 10 V, RG = 3 Ω, RL = 2.6 Ω Turn-off Fall Time mΩ pF ns Gate Charge Characteristicsb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS = 4.5 V, VDS = 15 V, IDS = 5 A nC Diode Characteristics VSDa Diode Forward Voltage ISD = 1A, VGS = 0 V V Notes： a: Pulse test ; pulse width  300 s, duty cycle  2% b: Guaranteed by design, not subject to production testing www.kjx-tech.cn 3 Version 0.3 KJ3400S 7. Typical Characteristics Current Capability 0.9 5.5 0.8 5.0 0.7 4.5 ID - Drain Current (A) Ptot - Power (W) Power Capability 0.6 0.5 0.4 0.3 0.2 4.0 3.5 3.0 2.5 2.0 1.5 0.1 T =25 oC 0.0 A 1.0 40 20 0 80 60 100 120 140 160 Normalized Transient Thermal Resistance ID - Drain Current (A) 10 100us 300us 1ms 10ms 100ms 1s DC o T =25 C A 0.01 0.01 0.1 1 10 100 300 60 40 100 120 140 160 80 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 Mounted on 1in pad o R JA : 150 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) VDS - Drain-Source Voltage (V) www.kjx-tech.cn 20 Transient Thermal Impedance Safe Operation Area 30 0.1 A 0 Tmp – Mounting Point Temp. (℃) Tmp – Mounting Point Temp. (℃) 1 T =25 oC,V G=10V 4 Version 0.3 KJ3400S 7. Typical Characteristics (Cont.) Normalized On Resistance Diode Forward Current 2.0 20 VGS = 10V 1.8 I = 4A 1.6 IS - Source Current (A) Normalized On Resistance DS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10 o T =150 C j o T =25 C j o R @T =25 C: 25m ON 0.0 -50 -25 0 25 50 j 1 0.0 75 100 125 150 Tj - Junction Temperature (℃) 0.2 0.4 1.0 1.2 1.4 Gate Charge 1400 10 VDS= 15V Frequency=1MHz I = 4A VGS - Gate-Source Voltage (V) 1200 Ciss C - Capacitance (pF) 0.8 VSD - Source-Drain Voltage (V) Capacitance 1000 800 600 400 Coss 200 0 0.6 Crss 0 5 10 15 6 4 2 0 20 VDS - Drain-Source Voltage (V) www.kjx-tech.cn DS 8 0 2 4 6 8 10 QG - Gate Charge (nC) 5 Version 0.3 KJ3400S 8. Typical Characteristics (Cont.) Normalized On Resistance Diode Forward Current 2.0 20 VGS = 10V 1.8 I = 4A 1.6 IS - Source Current (A) Normalized On Resistance DS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10 o T =150 C j o T =25 C j o R @T =25 C: 25m ON 0.0 -50 -25 0 25 50 j 1 0.0 75 100 125 150 Tj - Junction Temperature (℃) 0.2 0.4 1.0 1.2 1.4 Gate Charge Capacitance 10 VDS= 15V Frequency=1MHz I = 4A VGS - Gate-Source Voltage (V) 1200 Ciss C - Capacitance (pF) 0.8 VSD - Source-Drain Voltage (V) 1400 1000 800 600 400 Coss 200 0 0.6 Crss 0 5 10 15 8 6 4 2 0 20 VDS - Drain-Source Voltage (V) www.kjx-tech.cn DS 0 2 4 6 8 10 QG - Gate Charge (nC) 6 Version 0.3 KJ3400S 8. Package Dimensions SOT23 Package D 0.25 L E E1 L1 b e Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.kjx-tech.cn Dimensions In Millimeters Min Max 0.90 1.15 0 0.10 0.90 1.05 0.30 0.50 0.08 0.15 2.80 3.00 1.20 1.40 2.25 2.55 0.95 TYP 1.80 2.00 0.55 REF 0.30 0.50 0° 8° 7 A A2 A1 e1 Dimensions In Inches Min Max 0.035 0.045 0 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° Version 0.3