SY6703HFC

Application Note: SY6703 Low Voltage H-Bridge IC Preliminary Specification AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 1 AN_SY6703 Pinout (top view) nSLEEP 1 16 AIN1 AOUT1 2 15 AIN2 AISEN 3 14 VINT AOUT2 4 13 GND BOUT2 5 12 VM BISEN 6 11 VCP BOUT1 7 10 BIN2 nFAULT 8 9 BIN1 Package type SY6703HFC TSSOP-16E ① Top Mark AZRxyz r Part Number Number nSLEEP 1 AOUT1 2 AISEN 3 AOUT2 BOUT2 4 5 BISEN 6 BOUT1 nFAULT BIN1 BIN2 VCP VM GND VINT AIN2 AIN1 GND 7 8 9 10 11 12 13 14 15 16 17 Description Sleep mode pin. Logic low puts device in low-power sleep mode, this pin has a internal pull-down resistor Bridge A output 1 pin. Connect this pin to motor winding. Bridge A current sense pin. Connect a resistor between this pin and GND for current control, or connect to GND is current control is not needed. Bridge A output 2 pin. Connect this pin to motor winding. Bridge B output 2 pin. Connect this pin to motor winding. Bridge B current sense pin. Connect a resistor between this pin and GND for current control, or connect to GND is current control is not needed Bridge B output 1 pin. Connect this pin to motor winding. Fault state output pin. Logic low if fault is detected. Bridge B input 1 pin. Control the state of bridge B, this pin has a internal pull-down resistor. Bridge B input 2 pin. Control the state of bridge B, this pin has a internal pull-down resistor Internal charge pump voltage for high side gate driver. Connect a ceramic capacitor to VM. Motor power supply pin. Decouple this pin to GND pin with 0.1uF ceramic cap. Device ground pin. Internal logic and driver supply. Connect this pin with a ceramic capacitor to GND. Bridge A input 2 pin. Control the state of bridge A, this pin has a internal pull-down resistor. Bridge A input 1 pin. Control the state of bridge A, this pin has a internal pull-down resistor. Ground pin for thermal dissipation. Sil er gy Co rp .C on fid en tia l-P re p Name ar ed Note① ： x=year code, y=week code, z= lot number code. fo 17 GND AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 2 AN_SY6703 AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 3 AN_SY6703 Electrical Characteristics (TA = 25°C, VM=5V, unless otherwise specified) Parameter Power Supplies VM Operating Supply Current VM Sleep Mode Current VM Undervoltage Lockout Voltage Symbol Test Conditions IVM IVMS VUVLO_RISE VUVLO_FALL nSLEEP=0V, VM=5V VM Rising VM Falling Min VM=5V, xIN=0V, xIN2=0V Typ Max Unit 1 1.8 2.2 2.1 2 2.5 mA 0.5 0.7 V µA V V Logic Level Input VIL nSLEEP All other pins nSLEEP All other pins VIH VIHYS IIL IIH Input High Current RPD Pulldown Resistance IO=5mA VO=3.3V High Side MOSFETs On Resistance Rdson Low Side MOSFETs On Resistance er gy Sil Startup Time ns 0.5 1 V µA 310 400 410 mΩ 310 270 330 ±1 2 150 VTRIP tBLANK kΩ 260 Internal PWM Frequency VM=5V,16Ω to GND, 10% to 90% VM VM=5V VM=5V IOCP tOCPR tDEG TSD THYS tWAKE 6.6 16.5 600 150 450 V µA µA 1 13 33 330 fid .C on fPWM tR tF tPROP tDEAD VM=5V, IO=500mA, TJ=25℃ VM=5V, IO=500mA, TJ=85℃ VM=2.7V, IO=500mA, TJ=25℃ VM=2.7V, IO=500mA, TJ=85℃ VM=5V, IO=500mA, TJ=25℃ VM=5V, IO=500mA, TJ=85℃ VM=2.7V, IO=500mA, TJ=25℃ VM=2.7V, IO=500mA, TJ=85℃ VM=5V, VOUT=0V, TJ=25℃ en IOFF Co rp Off-State Leakage Current Motor Driver Current Control PWM Frequency Rise Time Fall Time Propagation Delay INx to OUTx Dead Time Protection Output Over Current Limit Over Current Retry Time OCP Deglitch Time Thermal Shutdown Temperature Thermal Shutdown hysteresis Current Control xISEN Trip Voltage Current Sense Blanking Time Sleep Mode 0.4 VIN=0V VIN=3.3V, nSLEEP VIN=3.3V, all except nSLEEP nSLEEP All other pins r Input Deglitch Time tDEG nFAULT Output (Open-Drain Output) Output Low Voltage VOL Output High Leakage Current IOH H-Bridge MOSFETs V fo Input Hysteresis Input Low Current 2.5 2 ar ed Input High Voltage tia l-P re p Input Low Voltage 160 µA 50 50 50 1.1 50 kHz ns ns µs ns 2.5 1.2 180 160 20 A ms ns ℃ ℃ 200 3.75 180 240 mV µs 1 ms nSLEEP Inactive high to Hbridge On Note 1: Stresses beyond the “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 2: θ JA is measured in the natural convection at TA = 25°C on a low effective single layer thermal conductivity test board of JEDEC 51-3 thermal measurement standard. Note 3: Power dissipation and thermal limits must be observed. AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 4 AN_SY6703 AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 5 AN_SY6703 AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 6 AN_SY6703 Functional Description PWM Motor Drivers tia l-P re p ar ed fo r SY6703 contains two identical H-bridge motor drivers with current-control PWM circuitry. A block diagram of the circuitry is shown below: H-Bridge Driving Control fid en Figure3. Motor Control Circuitry xIN2 0 1 0 1 er gy Co rp xIN1 0 0 1 1 .C on The Bridge is controlled by a PWM input interface, also called IN/IN interface. The following table shows the control logic of the device: Table 1 H-Bridge Logic xOUT1 Z L H L xOUT2 Z H L L Function Coast/Fast Decay Reverse Forward Brake/Slow Decay Sil The inputs can also be used for PWM control of the motor speed. When controlling a winding with PWM, when the drive current is interrupted, the inductive nature of the motor requires that the current must continue to flow. This is called recirculation current. To handle this recirculation current, the H-bridge can operate in two different states, fast decay or slow decay. In fast decay mode, the H-bridge is disabled and recirculation current flows through the body diodes; in slow decay, the motor winding is shorted. To PWM using fast decay, the PWM signal is applied to one xIN pin while the other is held low; to use slow decay, one xIN pin is held high. AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 7 AN_SY6703 Table 2 PWM Control of Motor Speed xIN1 PWM 1 0 PWM xIN2 0 PWM PWM 1 Function Forward PWM, Fast Decay Forward PWM, Slow Decay Reverse PWM, Fast Decay Reverse PWM, Slow Decay Figure 4 shows the current paths in different drive and decay modes. Forward Reverse Figure4. Decay Mode Current Control The current through the motor windings may be limited, or controlled, by a fixed-frequency PWM current regulation, or current chopping. For DC motors, current control is used to limit the start-up and stall current of the motor. For stepper motors, current control is often used at all times. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. If the current reaches the current chopping threshold, the bridge disables the current until the beginning of the next PWM cycle. Note that immediately after the current is enabled, the voltage on the xISEN pin is ignored for a fixed period of time before en AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 8 AN_SY6703 If a 1-Ω sense resistor is used, the chopping current will be 200 mV/1 Ω = 200 mA. Once the chopping current threshold is reached, the H-bridge switches to slow decay mode. Winding current is recirculated by enabling both of the low-side FETs in the bridge. This state is held until the beginning of the next fixed-frequency PWM cycle. Note that if current control is not needed, the xISEN pins should be connected directly to ground. Sleep Mode ar ed fo r Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump is stopped, all internal logic is reset, and all internal clocks are stopped. All inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (up to 1 ms) needs to pass before the motor driver becomes fully operational. To make the board design simple, the nSLEEP can be pulled up to the supply (VM). It is recommended to use a pullup resistor when this is done. This resistor limits the current to the input in case VM is higher than 6.5 V. Internally, the nSLEEP pin has a 500-kΩ resistor to GND. It also has a clamping zener diode that clamps the voltage at the pin at 6.5 V. Currents greater than 250 µA can cause damage to the input structure. Hence the recommended pullup resistor would be between 20 kΩ and 75 kΩ. Protection Circuits tia l-P re p The device is fully protected against undervoltage, overcurrent, and overtemperature. Overcurrent Protection (OCP) fid en An analog current limit circuit on each FET limits the current through the FET by limiting the gate drive. If this analog current limit persists for longer than the OCP deglitch time, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. The driver will be re-enabled after the OCP retry period (tOCP) has passed. nFAULT becomes high again at this time. If the fault condition is still present, the cycle repeats. If the fault is no longer present, normal operation resumes and nFAULT remains deasserted. Please note that only the H-bridge in which the OCP is detected will be disabled while the other bridge will function normally. .C on Overcurrent conditions are detected independently on both high and low side devices; i.e., a short to ground, supply, or across the motor winding will all result in an overcurrent shutdown. Note that overcurrent protection does not use the current sense circuitry used for PWM current control, so functions even without presence of the xISEN resistors. Co rp Thermal Shutdown (TSD) If the die temperature exceeds safe limits, all MOSFETs in the H-bridge are disabled. Once the die temperature has fallen to a safe level, operation automatically resumes. er gy Undervoltage Lockout(UVLO) Sil If at any time the voltage on the VM pin falls below the undervoltage lockout threshold voltage, all circuitry in the device will be disabled, and all internal logic will be reset. Operation will resume when VM rises above the UVLO threshold. nFAULT is driven low in the event of an undervoltage condition. THERMAL INFORMATION Thermal Protection The device has thermal shutdown (TSD) as described in the Protection Circuits section. If the die temperature exceeds approximately 160°C, the device is disabled until the temperature drops to a safe level. AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 9 AN_SY6703 Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature. Maximum Output Current In actual operation, the maximum output current achievable with a motor driver is a function of die temperature. This in turn is greatly affected by ambient temperature and PCB design. Basically, the maximum motor current will be the amount of current that results in a power dissipation level that, along with the thermal resistance of the package and PCB, keeps the die at a low enough temperature to stay out of thermal shutdown. The dissipation ratings given in the datasheet can be used as a guide to calculate the approximate maximum power dissipation that can be expected to be possible without entering thermal shutdown for several different PCB constructions. However, for accurate data, the actual PCB design must be analyzed via measurement or thermal simulation. Power Dissipation 2 (2) ar ed PTOT = R DSON × I OUT ( RMS ) fo r Power dissipation in the device is dominated by the power dissipated in the output MOSFET resistance, or RDSON. A H-bridge Average power dissipation can be roughly estimated by: tia l-P re p where PTOT is the total power dissipation, RDSON is the resistance of the HS plus LS MOSFETs, and IOUT(RMS) is the RMS or DC output current being supplied to the load. The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking. Sil er gy Co rp .C on fid en Note that RDSON increases with temperature, so as the device heats, the power dissipation increases. AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 10 AN_SY6703 Side view A Sil er gy Co rp .C on Top view fid en tia l-P re p ar ed fo r TSSOP16E Package Outline Drawing Side view B Notes: All dimension in MM and exclude mold flash & metal burr. AN_SY6703 Rev.0.2 Silergy Corp. Confidential-prepared for Customer Use Only 11