LL60P

LL60P Silicon Schottky Barrier Diode LL-34 Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage VR 20 V Average Rectified Output Current IO 50 mA Peak Forward Current IFM 150 mA Surge Forward Current Isurge 500 mA Junction Temperature Tj 125 ℃ Tstg - 55 to + 150 ℃ Storage Temperature Range Characteristics at Ta = 25℃ Parameter Symbol Min. Max. Unit Forward Current at VF = 1 V IF 4 - mA Reverse Current at VR = 10 V IR - 50 µA Rectification efficiency at Vi = 2 Vrms, R = 5 KΩ η 55 - % 1/2 ® Dated: 17/04/2020 Rev: 03 output 5K 5KΩ 20PF ~ ~ ~ 20PF LL60P Input 2Vrms Rectification Efficiency Measurement Circuit Forward Characteristics mA 30 IF 15 0 1.6 V 0.2 V Reverse Characteristics uA 200 IR 100 0 25 50 V VR 2/2 ® Dated: 17/04/2020 Rev: 03