PKC26BB

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PKC26BB PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID4 30V 1.6mΩ 151A D G Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. S D D D D G. GATE D. DRAIN S. SOURCE Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. #1 S S S G 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 TC = 25 °C ID TC = 100 °C Pulsed Drain Current1 Continuous Drain Current IDM TA = 25 °C ID TA = 70 °C Avalanche Current Avalanche Energy Power Dissipation Power Dissipation3 L = 0.1mH TC = 25 °C TA = 25 °C Operating Junction & Storage Temperature Range 200 36 EAS 162 Tj, Tstg A 28 57 PD TA = 70 °C 95 IAS PD TC = 100 °C 151 73 29 4.1 2.6 -55 to 150 mJ W W °C G-48-2 REV 1.0 1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PKC26BB PDFN 5x6P Halogen-Free & Lead-Free THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RJA 30 Junction-to-Ambient2 Steady-State RJA 50 Junction-to-Case Steady-State RJC 1.7 UNITS °C / W 1 Pulse width limited by maximum junction temperature. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3 The Power dissipation is based on RJA t ≦10s value. 4 The maximum current rating is package limited. 2 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 VGS(th) VDS = VGS, ID = 250A 1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Gate Threshold Voltage Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs 1.6 2.35 VGS = 4.5V, ID = 20A 1.6 2.3 VGS = 10V, ID = 20A 1.1 1.6 VDS = 5V, ID = 20A 123 V nA A mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge2 Qg Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 Turn-Off Delay Time Fall Time2 2 2 3499 VGS = 0V, VDS = 15V, f = 1MHz 625 pF 408 VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω 70 VGS = 10V VGS = 4.5V VDS = 15V , VGS = 10V, ID = 20A Qgs 36 9.2 Qgd 17 td(on) 20 tr VDS = 15V , 120 td(off) ID  20A, VGS = 10V, RGEN =6Ω 97 tf nC nS 150 G-48-2 REV 1.0 2 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PKC26BB PDFN 5x6P Halogen-Free & Lead-Free SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 1 Forward Voltage IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 20A, VGS = 0V IF = 20A, dlF/dt = 100A / S 73 A 1 V 28 nS 13 nC 1 Pulse test : Pulse Width  300 sec, Duty Cycle  2％. Independent of operating temperature. 3 The maximum current rating is package limited. 2 G-48-2 REV 1.0 3 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PDFN 5x6P Halogen-Free & Lead-Free Output Characteristics 30 PKC26BB Transfer Characteristics 30 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS=2.7V VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V 24 18 VGS=2.5V 12 6 24 18 12 25℃ 6 125℃ -20℃ 0 0 0 1 2 3 4 5 0 6 VDS, Drain-To-Source Voltage(V) 1 2 3 4 5 VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source On-Resistance VS Drain Current 0.008 0.004 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) ID=20A 0.006 0.004 0.002 0 2 4 6 8 0.0032 0.0024 VGS=4.5V 0.0016 VGS=10V 0.0008 0 10 0 VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature 12 18 24 30 Capacitance Characteristic 4500 4000 1.8 3500 1.6 C , Capacitance(pF) Normalized Drain to Source ON-Resistance 2.0 6 ID , Drain-To-Source Current(A) 1.4 1.2 1.0 0.8 VGS=10V ID=20A 0.6 CISS 3000 2500 2000 1500 1000 COSS 500 CRSS 0.4 -50 -25 0 25 50 75 100 125 0 150 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) G-48-2 REV 1.0 4 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PDFN 5x6P Halogen-Free & Lead-Free Gate charge Characteristics Source-Drain Diode Forward Voltage 1000 VDS=15V ID=20A 8 100 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 10 PKC26BB 6 4 2 10 150℃ 25℃ 1 0.1 0 0 20 40 60 80 0.0 100 0.2 Qg , Total Gate Charge(nC) 0.4 0.6 0.8 1.0 Safe Operating Area 1.4 Single Pulse Maximum Power Dissipation 150 1000 Operation in This Area is Limited by RDS(ON) Single Pulse RθJA = 50 ˚C/W TA = 25˚C 120 Power(W) 100 ID , Drain Current(A) 1.2 VSD, Source-To-Drain Voltage(V) 10 1ms 10ms 1 90 60 100ms NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 50 ˚C/W 4.Single Pulse 0.1 0.01 0.01 30 DC 0.1 1 10 0 0.001 100 VDS, Drain-To-Source Voltage(V) 0.01 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 1 Duty cycle=0.5 Notes 0.2 0.1 0.1 0.05 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.02 0.01 single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] G-48-2 REV 1.0 5