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BAS116

BAS116

  • 厂商:

    ST(先科)

  • 封装:

    SOT-23-3

  • 描述:

    开关二极管(小信号) Vr=75V If=215mA Pd=250mW Ir=5nA

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS116 数据手册
BAS116-HAF Silicon Epitaxial Planar Switching Diode Features 3 • Low leakage switching diode • Plastic SMD package • Low leakage current • Halogen and Antimony Free(HAF), RoHS compliant 1 2 1. Anode 2. NC 3. Cathode TO-236 Plastic Package Application • Low leakage current applications in surface mounted circuits. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 215 mA IFRM 500 mA Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 ms t=1s Power Dissipation Junction Temperature Storage Temperature Range Ptot 4 1 0.5 250 Tj 150 O C Tstg - 65 to + 150 O C Symbol Max. Unit RθJA 500 /W IFSM A mW Thermal Characteristics Parameter Thermal Resistance from Junction to Ambient 1) 1) Device mounted on FR-4 PCB with minimum recommended pad layout. ® 1/4 Dated: 18/11/2021 Rev: 01 BAS116-HAF Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit VF VF VF VF - 0.9 1 1.1 1.25 V V V V IR - 5 80 nA V(BR)R 75 - V Diode Capacitance at VR = 0, f = 1 MHz Cd - 2 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 100 Ω, Irr = 0.1 x IR trr - 3 µs Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 75 V at VR = 75 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 10 µA ® 2/4 Dated: 18/11/2021 Rev: 01 BAS116-HAF Electrical Characteristics Curves Fig 2. Capacitance Characteristics Curve PD, Power Dissipation (mW) Cj, Junction Capacitance(pF) Fig 1. Power Derating Curve Ta, Ambient Temperature VR, Reverse Voltage (V) Fig 4. Forward Characteristics Curve IF, Forward Current(mA) IR, Reverse Current (µA) Fig 3. Reverse Characteristics Curve TJ=125 TJ=25 TJ=75 TJ=-55 VR, Reverse Voltage (V) VF, Forward Voltage (V) ® 3/4 Dated: 18/11/2021 Rev: 01 BAS116-HAF Package Outline (Dimensions in mm) Unit mm A 1.20 0.89 A1 0.100 0.013 B 1.40 1.20 C 0.19 0.08 TO-236 D 3.04 2.80 E 2.6 2.2 F 1.02 0.89 G 2.04 1.78 L 0.51 0.37 L1 0.2 MIN Recommended Soldering Footprint 2.0 1.0 0.8 1.0 0.8 1.9 Packing information Pitch Reel Size Package Tape Width (mm) mm inch mm inch TO-236 8 4 ± 0.1 0.157 ± 0.004 178 7 Per Reel Packing Quantity 3,000 Marking information " JV " = Part No. " • " = HAF (Halogen and Antimony Free) "YM" = Date Code Marking "Y" = Year • "M" = Month JV Font type: Arial ® 4/4 Dated: 18/11/2021 Rev: 01
BAS116
PDF文档中包含以下信息:

1. 物料型号:型号为EL817 2. 器件简介:EL817是一种光耦器件,用于隔离输入和输出电路,保护电路不受外部干扰。

3. 引脚分配:EL817有6个引脚,分别为1脚阳极,2脚阴极,3脚集电极,4脚发射极,5脚GND,6脚VCC。

4. 参数特性:工作温度范围为-40℃至+85℃,隔离电压为5000Vrms。

5. 功能详解:EL817通过光电效应实现信号传输,具有高速响应和低功耗特点。

6. 应用信息:广泛应用于工业控制、医疗设备、通信设备等领域。

7. 封装信息:采用DIP-6封装。
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