1N4150

1N4150 Silicon Epitaxial Planar Switching Diode Max. 0.5 Features Min. 27.5 Max. 1.9 • Fast switching speed Black Cathode Band Black Part No. Black "ST" Brand • High reliability XXX Max. 3.9 ST Applications • For general purpose switching applications Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 50 V Forward Continuous Current IFM 300 mA Average Rectified Forward Current IF(AV) 200 mA Power Dissipation Ptot 500 mW Tj 200 O C Tstg - 65 to + 175 O C Symbol Max. Unit RθJA 350 /W Junction Temperature Operating and Storage Temperature Range Characteristics at Ta = 25 Parameter Thermal Resistance Junction to Ambient 1) 1) Valid provided that leads are at a distance of 8 mm from case kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 200 mA VF 1.2 V Reverse Current at VR = 50 V IR 100 nA Reverse Recovery Time at IF = IR = 200 mA, Irr = 0.1 X IR, RL = 100 Ω trr 4 ns 1/2 ® Dated : 04/05/2023 Rev:01 1N4150 Electrical Characteristics Curves Fig 1. Forward Characteritics Fig 2. Reverse Characteritics Fig 3. Junction Capacitance Fig 4. Power Derating Curves 2/2 ® Dated : 04/05/2023 Rev:01