MG1A01

Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- MG1A01 GaAs Hall Element 具有高线性度与优异温度特性的砷化镓霍尔元件 Linear GaAs Hall element with excellent thermal characteristics 超小型 DFN 封装 Thin-type DFN Package 编带包装（每载盘 10,000 颗） Shipped in packet-tape reel(10,000pcs per reel) 外形尺寸图 Dimensional Drawing (Unit: mm) 0.1 (0.1) N极 Sensor center φ0.15 （0.08） Sensor center 引脚定义（Pinning） 输入 Input 1（±） 3（ ） 输出 Output 2（±） 4（ ） Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 绝对最大额定值 Absolute Maximum Rating 项目 Item 符号 Symbol 最大功率耗散 Maximum Power Dissipation PD 最大输入电压 Maximum Input Voltage 条件 Conditions 范围 Limit 单位 Unit 105 mW VC 9.5 V 工作温度 Operating Temperature Range Topr -40 ~ +125 ℃ 保存温度 Storage Temperature Range TSTG -40 ~ +150 ℃ Ta = 25℃ Figure 1. 最大功率耗散-环境温度 Maximum Power Dissipation PD as a function of ambient temperature Ta Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 电气特性 Electrical Characteristics（RT=25℃） Table 1. MG1A01 电气特性表 项目 Item 霍尔电压 Hall Voltage 输入电阻 Input Resist. 输出电阻 Output Resist. 非平衡电压 Offset Voltage 霍尔电压温度系数 Temp. Coeffi. of VH 输入电阻温度系数 Temp. Coeffi. of Rin 霍尔电压线性度 Linearity of VH 符号 Symbol Electrical Characteristics of MG1A01 测试环境 Test Condi. B = 50mT, IC = 5mA Ta = RT B = 0mT, IC = 0.1mA Ta = RT B = 0mT, IC = 0.1mA Ta = RT B = 0mT, IC = 5mA Ta = RT B = 50mT, IC = 5mA, Ta =25℃ ~ 125℃ B = 0mT, IC = 0.1mA, Ta = 25℃ ~ 125℃ B = 0.1 - 0.5T, IC = 5mA Ta = RT VH Rin Rout Vos |αVH| αRin ΔK 最小 Min. 最大 Max. 单位 Unit 36 54 mV 650 850 Ω 650 850 Ω -5 +5 mV 0.06 %/℃ 0.3 %/℃ +2 % -2 标准 Typ. Note: 1. �H = �H−M − �os In which V H-M is the Output Hall Voltage, �H is the Hall Voltage and �os is the offset Voltage under the identical electrical stimuli. 2. 3. 4. α�H = 1 �H(��1 ) × �H (��2 )−�H(��1 ) 1 × ��n ��2 −��� (��1 ) α�in = � Δ� = in (��1 ) ��2 −��1 � �1 −� �2 � �1 +� �2 2 ��2 −��1 × 100 × 100 × 100 �=� �H � ×� ��1 = 25℃, ��2 = 125℃ ��1 = 25℃, ��2 = 125℃ �1 = 0.5T, B 2 = 0.1T Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 特性曲线图 Characteristic Curves Figure 2. 输入电阻-环境温度 Input resistance Rin as a function of ambient temperature Ta Figure 3. 霍尔电压-磁感应强度 Hall voltage VH as a function of magnetic flux density B Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- Figure 4. 霍尔电压-环境温度 Hall voltage VH as a function of ambient temperature Ta Figure 5. 霍尔电压-驱动电流/驱动电压 Hall voltage VH as a function of electrical stimuli Ic/ Vc Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- Figure 6. 非平衡电压-环境温度 Offset voltage VOS as a function of ambient temperature Ta Figure 7. 非平衡电压-驱动电流/驱动电压 Offset voltage VOS as a function of electrical stimuli Ic/Vc Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 焊接条件 助焊剂材料 - 使用树脂基助焊剂，避免使用有机或无机酸基及水溶性助焊剂。 助焊剂的清洗条件 - 使用乙醇或异丙醇作为清洁剂。 - 工艺温度≤50℃。 - 持续时间不超过 5 分钟。 焊接方法 焊接方法 焊接方法说明 焊接温度 回流法 在高温下进行焊接的方法 最高 260℃，10 秒以内 波峰焊 在镀锡缸中完成焊接的方法 最高 260℃，10 秒以内 烙铁法 使用烙铁修正引脚焊接部分的方法 最高 350℃，3 秒以内 焊接温度范围 Figure 8. （参考）浸入焊接条件 Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- Figure 9. （参考）回流焊条件 ESD防护 本产品对 ESD（静电放电）敏感，接触带有 ESD-Caution 标记的霍尔元件时，环境要求如下： - 环境不太可能出现静电荷（例如，相对湿度超过 40%RH）。 - 接触产品时应该穿戴防静电服和腕带。 - 对直接接触产品的设备或容器实施防静电措施。 存储防护 - 产品应储存在适当的温度和湿度环境下（5 至 35°C，40%至 85%RH），且使产品远离氯和腐蚀性气体。 - 即使在适当的条件下，长期存放也可能导致产品的可焊接性和电气性能降低。针对长期存放的产品，应 该在使用前应检查其可焊性。 - 如果储存超过 2 年，建议储存在氮气环境中。大气中的氧气会氧化产品的引线，导致引线可焊接性变差。 Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 安全防护 - 请勿通过燃烧，粉碎或化学处理等方式将本产品变成气体，粉末或液体。 - 丢弃本产品时，请遵守法律和公司规定。 Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- Soldering Conditions The following conditions should be preserved. Solder ability should be checked by yourself, because it is depend on solder paste material and other parameters. Material of solder flux - Use the resin based flux and refrain from using organic or inorganic acid based and water-soluble one. Cleansing of solder flux conditions - Use Ethanol or Isopropyl alcohol as cleansing material. - Process temperature should be 50℃ or less. - Duration should be 5min or less. Hand-Soldering - Solder the leads to PC board at the point(part from the body) at 260℃ for 10 seconds or 350℃ for less than 3 seconds. Figure 8. (Reference) Conditions of Dip Soldering Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- Figure 9. (Reference) Conditions of Reflow Profile Precautions for ESD This product is the device that is sensitive to ESD (Electrostatic Discharge). Handling Hall Elements with the ESD-Caution mark under the environment in which - Static electrical charge is unlikely to arise. (Ex; Relative Humidity; over 40% RH). - Wearing the antistatic suit and wristband when handling the devices. - Implementing measures against ESD as for containers that directly touch the devices. Precautions for Storage - Products should be stored at an appropriate temperature and humidity (5 to 35°C, 40 to 85%RH). Keep products away from chlorine and corrosive gas. - Long-term storage may result in poor lead solder ability and degraded electrical performance even under proper conditions. For those parts, which stored long –term shall be check solder ability before it Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Elementis used. - For storage longer than 2 years, it is recommended to store in nitrogen atmosphere. Oxygen of atmosphere oxidizes leads of products and lead solder ability get worse. Precautions for Safety - Do not alter the form of this product into a gas, powder or liquid through burning, crushing or chemical processing. - Observe laws and company regulations when discarding this product. Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion. Matrix Opto Co., Ltd -MG1A01 GaAs Hall Element- 文件修改历史 版本 日期 描述 1.0 2020.02.01 初始版本发行 1.2 2020.06.01 增加特性曲线图 2.0 2021.10.11 1. 补充英文说明 2. 调整特性曲线图格式 3. 增加使用安全说明 3.0 2022.06.12 调整外形尺寸图的尺寸误差范围 3.1 2022.10.09 1. 增加最大功率耗散曲线图 2. 增加非平衡电压-环境温度、非平衡电压-驱动电 流/电压的特性曲线图 3. 增加中文说明 4. 增加焊接工艺说明与焊接温度曲线图 3.2 2022.11.30 1. 调整外形尺寸图中内核芯片布局 2. 调整外形尺寸图中长、宽、高的公差范围 Copy Right Reserved JZWI-DS-001 Version 3.2 Matrixopto.Co.,Ltd is the owner of the trademarks used in this document, which has the exclusive right to prevent any third parties not having the owner’s consent from using in the course of trade identical or similar signs for goods or services where such use would result in a likelihood of confusion.