RB521G-30

RB521G-30-HAF Silicon Epitaxial Planar Schottky Barrier Diode PINNING DESCRIPTION PIN Features • Low forward voltage • Halogen and Antimony Free(HAF), RoHS compliant 1 Applications • For rectifying small power application Top View Simplified outline SOD-523 and symbol 1 Cathode 2 Anode 2 Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit VR 30 V Average Rectified Forward Current IF(AV) 100 mA Peak Forward Surge Current (8.3 ms) IFSM 1 A Tj 125 ℃ Tstg - 40 to + 125 ℃ Reverse Voltage Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V 1/3 Symbol Min. Max. Unit V(BR)R 30 - V VF - 0.35 V IR - 10 µA ® Dated : 10/01/2023 Rev: 02 RB521G-30-HAF Electrical Characteristics Curves Fig 2. Forward Characteristics Curve Reverse Current (µA) Forward Current (mA) Fig 1. Reverse Characteristics Curve Forward Voltage (mV) Reverse Voltage (V) Fig 4. Junction Capacitance 125 Junction Capacitance (pF) Average Rectified Forward Current (mA) Fig 3. Average Current Derating Curve 100 75 50 25 0 0 25 50 75 100 125 150 Ambient Temperature (℃) Reverse Voltage (V) 2/3 ® Dated : 10/01/2023 Rev: 02 RB521G-30-HAF PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ∠ C A ALL ROUND HE D bp E A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O Recommended Soldering Footprint 1.7 0.6 0.8 Packing information Package SOD-523 Pitch Tape Width Reel Size Per Reel Packing Quantity (mm) mm inch mm inch 8 4 ± 0.1 0.157 ± 0.004 178 7 4,000 Marking information " E " = Part No. " III " = Cathode line " • " = HAF (Halogen and Antimony Free) Font type: Arial .E 3/3 ® Dated : 10/01/2023 Rev: 02