TIP122

TIP122-HAF NPN Silicon Power Darlington Transistor Features • Halogen and Antimony Free(HAF), RoHS compliant 1.Base 2.Colloctor 3.Emitter TO-220FB Plastic Package Applications • For power switching and amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 5 A Collector Current (Pulse) ICP 8 A Base Current IB 0.12 A Power Dissipation (Ta = 25 OC) PC 2 W Power Dissipation (Tc = 25 OC) PC 65 W Junction Temperature Tj 150 O C Tstg - 65 to + 150 O C Symbol Max. Thermal Resistance from Junction to Case RθJC 1.9 /W Thermal Resistance from Junction to Ambient RθJA 62.5 /W Storage Temperature Range Thermal Characteristics Parameter 1/4 Unit ® Dated: 29/03/2022 Rev: 03 TIP122-HAF Characteristics at Ta = 25 Parameter DC Current Gain at VCE = 3 V, IC = 0.5 A at VCE = 3 V, IC = 3 A Collector Base Cutoff Current at VCB = 100 V Collector Emitter Cutoff Current at VCE = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Sustaining Voltage at IC = 30 mA Collector Emitter Saturation Voltage at IC = 3 A, IB = 12 mA at IC = 5 A, IB = 20 mA Base Emitter On Voltage at VCE = 3 V, IC = 3 A 2/4 Symbol Min. Max. Unit hFE hFE 1000 1000 - - ICBO - 0.2 mA ICEO - 0.5 mA IEBO - 2 mA VCEO(sus) 100 - V VCE(sat) - 2 4 V VBE(on) - 2.5 V ® Dated: 29/03/2022 Rev: 03 TIP122-HAF Electrical Characteristics Curves Fig 2. VCE(sat)，VBE(sat) vs. Colloctor Current Fig 1. DC Current Gain vs. Colloctor Current Fig 3. Power Derating Curve 3/4 ® Dated: 29/03/2022 Rev: 03 TIP122-HAF Package Outline Dimensions (Units: mm) UNIT TO-220FB A 2.9 B 6.8 C 0.7 D 15 E 1.5 F 0.9 2.7 6.4 0.3 11 1.1 0.7 UNIT P P1 Q mm 13.3 12.7 8.2 7.6 3.7 3.5 mm G 2.54 TYP. W 10.2 9.8 H 4.7 4.3 H1 2.5 2.2 K 3.1 2.7 L 16.8 14.8 L1 9.4 9.0 N 1.4 1.2 Marking information " TIP122 " = Part No. " **** " = Date Code Marking Font type: Arial TIP122 **** 4/4 ® Dated: 29/03/2022 Rev: 03