MPSA29

MPSA29

  • 厂商:

    ST(先科)

  • 封装:

    TO92-3

  • 描述:

    通用三极管 TO92 NPN Ic=500mA

  • 详情介绍
  • 数据手册
  • 价格&库存
MPSA29 数据手册
MPSA29-HAF NPN Silicon Epitaxial Planar Darlington Transistor Features • Halogen and Antimony Free(HAF), RoHS compliant 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Emitter Base Voltage VEBO 12 V Collector Current IC 500 mA Power Dissipation Ptot 625 mW Tj, Tstg - 55 to + 150 Symbol Max. RθJA 200 Operating and Storage Temperature Range O C Thermal Characteristics Parameter Thermal Resistance from Junction Ambient 1/5 Unit ® Dated: 06/05/2022 Rev: 01 MPSA29-HAF Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 80 V Collector Emitter Cutoff Current at VCE = 80 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 100 µA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.01 mA at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at IC = 100 mA, VCE = 5 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz 2/5 Symbol Min. Max. Unit hFE hFE 10000 10000 - - ICBO - 100 nA ICES - 500 nA IEBO - 100 nA V(BR)CBO 100 - V V(BR)CES 100 - V V(BR)EBO 12 - V VCE (sat) - 1.2 1.5 V VBE(on) - 2 V fT 125 - MHz Cobo - 8 pF ® Dated: 06/05/2022 Rev: 01 MPSA29-HAF Electrical Characteristics Curves Fig. 1 Power Derating Curve Fig. 2 Output Characteristics Curve Fig. 4 DC Current Gain vs. Collector Current Fig. 3 Collector Current vs. Base-Emitter Voltage 3/5 ® Dated: 06/05/2022 Rev: 01 MPSA29-HAF Electrical Characteristics Curves Fig. 5 VBE(sat) vs. Collector Current Fig. 6 VCE(sat) vs. Collector Current Fig. 7 Output Capacitance 4/5 ® Dated: 06/05/2022 Rev: 01 MPSA29-HAF TO-92 Package Outline (Dimensions in millimeters) 4.7±0.2 1.2±0.1 Min. 12.5 4.7±0.2 1.5X0.1DP~0.2DP 0.4±0.05 1.27±0.1 0.34±0.05 3.6±0.1 1.27±0.1 8° 9±0.5 6±0.3 4±0.2 6.35±0.4 12.7±0.2 ∠0±1 2.54+0.4 -0.1 2.54+0.4 -0.1 18±0.5 0.3±0.2 16±1 19±1 23.65±1 TO-92 Ammo-Pack Outline (Dimensions in millimeters) ∠0±1 ∠0±1 ∠0±1 0.8±0.2 A Packing information Package TO-92 Bulk Packing Ammo-Packing Per Bag Qty Per Box Qty Per Carton Qty Per Box Qty Per Carton Qty 1,000 5,000 50,000 4,000 20,000 5/5 ® Dated: 06/05/2022 Rev: 01
MPSA29
- 物料型号: MPSA29-HAF - 器件简介: 这是一个NPN型达林顿晶体管,符合RoHS标准,无卤素和锑。 - 引脚分配: 1. 发射极 2. 基极 3. 集电极,封装在TO-92塑料封装中。 - 参数特性: - 绝对最大额定值包括100V的集电极-基极电压、100V的集电极-发射极电压、12V的发射极-基极电压、500mA的集电极电流和625mW的总功耗。 - 热特性包括最大200°C/W的结到环境的热阻。 - 功能详解: 文档提供了在25°C环境温度下的特性,包括直流电流增益、集电极-基极截止电流、集电极-发射极截止电流、发射极-基极截止电流、集电极-基极击穿电压、集电极-发射极击穿电压、发射极-基极击穿电压、饱和电压、基极-发射极导通电压、电流增益-带宽积和输出电容。 - 应用信息: 未在摘要中明确提及,但通常达林顿晶体管用于高增益开关或放大应用。 - 封装信息: 提供了TO-92封装的详细尺寸和包装信息,包括散装、Ammo-Pack封装的每袋、每盒和每箱数量。
MPSA29 价格&库存

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